| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
| V(BR)CBO | collector-base breakdown voltage | lc = 2.5 IE = 0 | 9 | | | V |
| V(BR)CEO | collector-emitter breakdown voltage | lc = 1 rriA; lB = 0 | 2.3 | | | V |
| V(BR)EBO | emitter-base breakdown voltage | IE = 2.5 lc = 0 | 2.5 | | | V |
| ICBO | collector-base leakage current | IE = 0; VCB = 4.5 V | | | 15 | nA |
| hFE | DC current gain | lc = 10 rTiA; VCE = 2 V | 70 | 140 | 210 | |
| Ce | collector capacitance | IE = ie = 0; VCB = 2 V; f= 1 MHz | | 150 | | fF |
| Cre | feedback capacitance | lc = 0; VCB = 2 V; f= 1 MHz | | 25 | | fF |
| Gmax | maximum power gain; note 1 | lc = 10 mA; VCE = 2 V; f= 2 GHz; Tamb = 25 IC | | 23 | | dB |
| NF | noise figure | lc = 0.5 mA; VCE = 2 V; f= 2 GHz; Fs = Fopt | | 1 | | dB |
| PL1 | output power at l dB gain compression | lc = 5 mA; VCE = 2 V; f= 2 GHz; ZS = Zs opt; ZL = ZL opt; note 2 | | 2 | | dBm |
| ITO | third order intercept point | lc = 10 mA; VCE = 2 V; f= 2 GHz; ZS = Zs opt; ZL = ZL opt; note 2 | | 7 | | dBm |
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