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TPS2818DBV 100PCS Datasheet
Description The MA4ST079 through MA4ST083 series of silicon hyperabrupt junction tuning varactors is produced with ion implantation and advanced epitaxial growth tech- niques. These diode.s have thermal oxide passivation, and feature very high capacitance ratio and quality factor. They are well suited for use from the sub-HF through UHF frequency range. The standard capacitance toler- ance is +10%, with tighter tolerances available. Capacitance matching at one or more bias voltages is also available.
TPS2818DBV 100PCS Price
Nominal Melting l2t A2 Sec. 0.00148 0.0110 0.0276 0.0870 0.100 0.143 0.220 0.230 0.213 0.432 0.690 1.20 1.33 2.50 3.90 6.42 7.00 8.20 16.3 22.0 24.0 40.1 45.0 80.0 136.0 170.0 200.0 214.0 9.71 25.0 60.4 47.3 67.1 137.0 129.0 245.0 575.0 1030.0 1690.0
TPS2818DBV 100PCS on stock

Characteristics Symbol Test Condition Min Typ. Max Unit
Transition Frequency fT VCE=2V, lc=lOmA, f=2GHz 19 23 GHz
Insertion Gain IS21el2 VCE=2V, lc=lOmA, f=2GHz 14 17 dB
Noise Figure NF VCE=2V, lc=5mA, f=2GHz 0.72 1 0 dB


Ratings
Parameter Symbol Conditions min typ max Unit
ICBO VCB=450V, IE=O 10 pA
Collector Cutoff Current ICES VCE=1000V, RBE=O 1.0 mA
Collector-to-Emitter Sustain Voltage VCEO(sus) IC=lOOmA.IB=O 450 V
Emitter Cutoff Curreni IEBO VEB=9V, IC=O 1 0 mA
Collector-to-Emitter Saturation Voltage VCE(sat) IC=2.5A, IB=0.5A 1.0 V
Base-to-Emitter Saturation Voltage VBE{sat) IC=2.5A, IB=0.5A 1.5 V