Device Description IDT provides proven, industry-leading network search engines (NSEs) and acomprehensivesuite ofsoftware thatenableand accelerate the intelligent p rocessing of network se rvices in com munications eq uip- ment. As a part ofthe complete IDT classification subsystem thatincludes content inspection engines, the IDT family of NSEs delivers high- pe rformance, featu re-rich, easy-to-use, integ rated search accelerators. TheIDT 75K62100 NSEisa high performance pipelinedlow-power, synchronousfull-ternary 128Kx 72 entry device. Each entrylocation in the NSE hasbotha Data entry and an associated Maskentry. The NSE devicesintegrate contentaddressable memory (CAM)technologywith high-performance logic. They can perform Lookup and Learn NSE operations plus Read, Write, Bu rst Write, and DuaIWrite maintenance operations. The IDT 75K62100 NSE device has a bi-directional bus that is a multiplexed add ress and data bus that can support 1 00 million sustained searches persecond. Thisdevice providesarraysegmentswhich can be configu red to enable multiple width lookupsfrom 36 t0 576 bits wide. The IDT 75K62100 requiresa l.2-voltVDD supply and a 2.5-voltVDDo supply. This NSE device provides the userwith flexibility and controlin determining the device powe r. Only the array segments thatwill be used foraspecific NSEoperation are powered upwhile the unused segments are not. TheIDT75K62100 utilizesthelatest high-performance l.2V CMOS processingtechnologyand is packaged inajEDEC Standard,thermally enhanced, low profile Ball Grid Array. The IDT 372 BGA package provides increased heattransferforthermally challenged systems. The 372 BGAfootprintis backwardscompatible withtheIDT64Kx72 Entry (75P52100) and 32K x 72 Entry (75P42100) NSE devices.
TPS23HD301PWP on stock| 1 2I | 2 | 4 | B | _ | ^ |
| I SERnLES 1 21000 | PLAW BUSH | oauut | FWCTIWl | Nsw Mooa | SIVElI CONT~CTS |
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| Parameters | Limits | Units | Conditions |
| VFM Max. Forward Voltage Drop | 1 07 | v | @15A | |
| See Fig. 101 | 1 26 | V | @30A | Tj= -550C |
| 1 56 | V | @60A |
| 0 96 | V | @15A | |
| 1 18 | V | @30A | Tj= 250C |
| 1 49 | V | @60A |
| 0 75 | V | @15A | |
| 0.92 | V | @30A | Tj= 1250C |
| 1.21 | V | @60A |
| IRM Max. Reverse Leakage Current | 0 12 | mA | TJ= 250C | |
| See Fig. 201 | 1 2 | mA | Tj= 1000C | VR= rated VR |
| 6 0 | mA | Tj= 1250C |
| CT Max. Junction Capacitance | 310 | pF | VR = 5VDC ( 1MHz, 250C) |
| L s Typical Series Inductance | 4 8 | nH | Measured from center of cathode pad to center of anode pad |
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