TPS2375069T Datasheet| CustomeCSP | | 5 | Bumps | | llimeters | Inches Dim | | | Nom | Max Min | Nom Max | | 0.915 | 0.960 | 1.005 | 0.0360 | 0.0378 | 0.0396 | Al | | 1.285 | 1.330 | 1.375 | 0.0506 | 0.0524 | 0.0541 | A2 | | 0.495 | 0.500 | 0.505 | 0.0195 | 0.0197 | 0.0199 | Bl | | 0.245 | 0.250 | 0.255 | 0.0096 | 0.0098 | 0.0100 | B2 | | 0.430 | 0.435 | 0.440 | 0.0169 | 0.0171 | 0.0173 | B3 | | 0.430 | 0.435 | 0.440 | 0.0169 | 0.0171 | 0.0173 | B4 | | 0.180 | 0.230 | 0.280 | 0.0071 | 0.0091 | 0.0110 | Cl | | 0.180 | 0.230 | 0.280 | 0.0071 | 0.0091 | 0.0110 | C2 | | 0.561 | 0.605 | 0.649 | 0.0221 | 0.0238 | 0.0255 | Di | | 0.355 | 0.380 | 0.405 | 0.0140 | 0.0150 | 0.0159 | D2 | | 3500ieces | | | | | # per tape and reel | | | Controlling dimension: millimeters | CSP Tape and Reel Specifications | | | | | | | | | |
TPS2375069T Price| PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | CONDITIONS. | | Collector-Base Breakdown Voltage | V(BR)CBO | -25 | -35 | | V | IC=-lOOpA | | Collector-Emitter Breakdown Voltage | V(BR}CEO | 20 | -25 | | V | IC=-lOmA* | | Emitter-Base Breakdown Voltage | V(BR}EBO | -7.5 | -8.5 | | V | IE=-100VA | | Collector Cut-Off Current | ICBO | | | 25 | nA | VCB=-20V | | Emitter Cut-Off Current | IEBO | | | 25 | nA | VEB=6V | | Collector Emitter Cut-Off Cu rrent | ICES | | | -25 | nA | VCES=-16V | | Collector-Emitter Saturation Voltage | VCE(sat) | | -19 170 -190 240 225 | -30 -220 -250 -350 -300 | mV mV mV mV mV | IC=-O.1A, IB=-lOmA* IC=-1A, IB=-20mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-150mA* IC=-3.5A, IB=-350mA* | | Base-Emitter Saturation Voltage | VBE(sat) | | -1.10 | -1.075 | V | IC=-3.5A, IB=-350mA* | | Base-Emitter Turn-On Voltage | VBE(on) | | -0.87 | -0.95 | V | IC=-3.5A, VCE=-2W | | Static Forward Current Transfer Ratio | hFE | 300 300 150 15 | 475 450 230 30 | | | IC=-lOmA, VCE=-2V* IC=-O.1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* | | Transition Frequency | fT | 1 50 | 180 | | MHz | IC=-50mA, VCE=-10V f=lOOMHz | | Output Capacitance | Cobo | | 21 | 30 | pF | VCB=-10V, f=lMHz | | Turn-On Time | t{on) | | 40 | | ns | VCC=-10V, IC=-1A | | Turn-Off Time | t{offJ | | 670 | | ns | IBl=IB2=10mA | | | | | | | |
TPS2375069T on stock 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire-containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. Current Sensing Resistor RSENSE The LT1 619 drives a low side N-channel MOSFET switch. The switch current is sensed with an external resistor RSENSE connected between the source of the MOSFET and ground. The internal blanking circuit blocks the voltage spike developed across RSENSE for 280ns at switch turn- on. The switch is turned off when the instantaneous voltage across RSENSE exceedsthe current limit threshold, VSENSE Allowing variations in VSENSE yields:
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