Note l. IE, VEC, trr, Orr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi) 2. Pulse width and repetition rate should be such that the device junction temp. (Ti) does not exceed Tjmax rating. 3. Junction temperature (Ti) should not increase beyond 150YC. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Te measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a; should be measured just under the chips.
TPS2032PE4 Price TYPE 40.31 1 CO (Sf:tYD 3.5 mm pinning TYPE 40.51 1 CO (sPcyD s mm pinning - Tin plated pins for P.C.B. - Standard contact material: AgNi Options: TYPE 40.31-0300 1 NO (SF:ST-NO) 3.5 mm pinning IYPE 40.51-0300 1 NO (SPST-NO) 5 mm pinning - Options: see coding table page 17 - Ordering information: see page 1 7
TPS2032PE4 on stock| SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
| VCBO | collector-base voltage | open emitter | | 20 | V |
| VCEO | collector-emitter voltage | open base | | 9.5 | V |
| VEBO | emitter-base voltage | open collector | | 2.5 | V |
| lc | collector current (DC) | | | 500 | mA |
| IC(AV) | average collector current | | | 500 | mA |
| Ptot | total power dissipation | Ts = 110 IC; note 1 | | 2 | W |
| Tstg | storage temperature | | -65 | +150 | 1[C |
| Tj | operating junction temperature | | | 175 | IC |
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| j( l | | | | | -lOO |
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