| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| TPDN1V470M8S | NEC | . | . | 1000 |
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TPDN1V470M8S Datasheet
TPDN1V470M8S Price
TPDN1V470M8S on stock Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. *Note : 1. tRDL : Last data in to row precharge delay 2. Number of valid output data after row precharge : 1, 2 for CAS Latency = 2, 3 respectively 3. The row active command of the precharge bank can be issued after tRP from this point. The new read/write command of other activated bank can be issued from this point. At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal. |
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