| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| TPC6103(TE85LF) | (SOT23) | TOSHIBA | 05+ |
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TPC6103(TE85LF) Datasheet On-board DSVD operation requires installation of the optional RCDSVD SCP (R6715-14). GSM operation is not available when the RCDSVD SCP is connected because MCU port PB5 is used for SCP chip select output (~SVDSEL) rather than address line A18 0utput which is needed to support the 4M ROM. TPC6103(TE85LF) Price
TPC6103(TE85LF) on stock The TH58NVGIS3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages). The TH58NVGIS3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non- volatile memory data storage. A slave receiver which is addressed must generate an acknowledge after the reception of each byte. Also a master must generate an acknowledge after the reception of each byte that has been clocked out of the slave transmitter. The device that acknowledges has to pull down the SDA line during the acknowledge clock pulse, so that the SDA line is stable LOW during the HIGH period of the acknowledge related clock pulse, set-up and hold times must be taken into account. |
