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suppliers of TPA321DGNRE and PDF data of TPA321DGNRE

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
TPA321DGNRE	TEXAS INSTRU				2274	ULTEST INTERNATIONAL TRADING C.. Contact:Veronica Lai Tel:86-755-23971083 Fax:86-755-82837284 Email: veronica@ultest.com

TPA321DGNRE Datasheet

Parameter	U nit	Minimum	Typical	Maximum
Center Frequency fo	MHz	139.6	140	140.4
Insertion Loss at f o	dB		9.1	12
1 dB Bandwidth	MHz	17.25	17.69
3 dB Bandwidth	MHz	1 8	18.84
35 dB Bandwidth	Mhz		2279	24.1
40 dB Bandwidth	MHz		2279	48
Passband Ripple(80% of 3 dB BW)	dB		O63	1
Phase Linearity(80% of 3 dB BW)	degrees		6	1 0
Delay Variation(80% of 3 dB BW)	nsec		64	120
Substrate M aterial			YZ LiNb0?
Temperature Shift	ppm/IC		-94
Ambient Temperature E1a:t:i.c: ~ITlljiic-		q	25 n	TrI
6 5 (.256	4 r 1	x 0.8 GOLD ED PADS	SMP-53 BOTTO~ VIEW	L2 rf'Tr I150n

TPA321DGNRE Price

ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature . . . . . . . . . -55 to +150 0C Junction Temperature .. .. ..... +150 aC Maximum . Maximum Power Dissipation {Ta = 25 0C) Total Power Dissipation . . . . . . . . . . . . . . . . . . .1.0 w Thermal Resistance(junction to Ambient) .. .125 0C/W Maximum Voltages and Currents (Ta = 25 0CJ VCBO Collectorto Base Voltage ........ 160 V VCEO Collector to Emitter Voltage .. ; ... 160 v VEBO Emitter to Base Voltage ,i...iiii 5.0 V [c Collector Current . . . . . . . . . . . . . . 50 mA
TPA321DGNRE on stock

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15W

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1,5v

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

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