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TP6800HD Datasheet
For further information write to: Hitachi Semiconductor Hitachi Europe GmbH (America) Inc. Electronic components Group 179 East Tasman Drive, Dornacher Stra~e 3 San Jose,CA 95134 D-85622 Feldkirchen, Munich Tel: <1> (408) 433-1990 Germany Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322
TP6800HD Price

Symbol Parameter Test Conditions Min Typ. Max Unit
V(BR)DSS Drain-source Breakdown Voltage ID = 500 ccA VGS = 0 1 000 V
IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS =0.8x Max Rating Te = 125 0C 250 1 000 ccA ccA
IGSS Gate-body Leakage Current (VDS = O) VGS=±30 V ±200 nA


TP6800HD on stock

l Size (mm) Max l050C R.C. (Arms) 200C ESR (Q, maxJ Panasonic
DxL 120Hz llOk~lOOkHz 120Hz 20kHz Part Number


Read Cycle Notes: 1. WE is high for read cycle. 2. All read cycle timing is referenced form the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ(max) iS less than tLZ(min) both for a given device and from device to device 5. Transition is measured + 200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS = VIL. 7. Address valid prior to coincident with CS transition low. 8. For common l/0 applications, minimization or elimination of bus contention condition is necessary during read and write cycle