TP50NE10S TP50NE10S TP50NE10S，there are the best TP50NE10S TP50NE10S TP50NE10S suppiers all over the world here.These are the list and detailed contact method of TP50NE10S TP50NE10S TP50NE10S suppliers all over the world as follows.You can buy or get informations of TP50NE10S TP50NE10S TP50NE10S through email , message or tel.

suppliers of TP50NE10S TP50NE10S TP50NE10S and PDF data of TP50NE10S TP50NE10S TP50NE10S

Part Numbert

Mfg

Packt

D/C

Descriptiont

Qty

Company/Contact

TP50NE10S TP50NE10S TP50NE10S Datasheet

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
gf	Forward Transconductance	VDS > ID(on) X RDS(on)max ID = 19 A	14	1 9		S
Ciss Coss Crss	Input Capacitance Output Capacitance Reverse Transfer Capacitance	VDS = 25 V f= 1 MHz VGS = 0		2000 350 80	2800 450 1 20	pF pF pF

TP50NE10S TP50NE10S TP50NE10S Price

Ic -2.0 A

5OA

10 A

20 A

lj-'_7

"ON"VOLTAGES

TP50NE10S TP50NE10S TP50NE10S on stock

	Symbol	Limits	Unit
Collector-base voltage	VCB	-15	V
Collector-emitter voltage	VCE	-12	V
Emitter-base voltage	VEB	-6	V
	lc	-2	A
Collector current	ICP	-4	A4
Collector power dissipation	Pe	400	mW
Junction temperature	Tj	150	oc
Storage temperature	Tstg	-55 to +150	oc

If the supply voltage (VDD) iS less than 7.OV, the input voltage must not over the VDD level though 7.OV limit specified. The power dissipation is value mounted on aglass epoxy board (FR-4) in size of 50x50x1.6 millimeters uare. Decoupling capacitor should be connected between VDD and Vss due to the stabilized operation for the

Suppliers Datasheet
		Exact Matc