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TP5089N (NS) TP5089N (NS) TP5089NNS Datasheet

COMMON EMITTER
Te= 12		joC

						5O
					4.5

						3O
	2	r	r	VG	E=2	0 v-

TP5089N (NS) TP5089N (NS) TP5089NNS Price

Parameter	16RIA	Units	Conditions
di/dt Max. rate of rise of turned-on current VDRkn " 600V VDRM " 800V VDRM 'v 1000V VDRKn " 1600V	200 180 160 150	A/ps	Tj = Tj max., VDkn = rated VDRM Gate pulse = 20V, isl , t = ', , tp = 6ps, tr = O.lps max. ITM = (2x rated di/dt) A
tgt Typical turn-on time	0.9		Tj = 250C, at = rated VDRMNRRM, Tj = 1250C
trr Typical reverse recovery time	4	US	Tj = Tj max., ITKn = IT(AV)' tp > 200ps, di/dt = -10A/ps
tq Typical turn-off time	110	US	Tj = Tj max., ITkn = IT(AV)' tp > 200ps, VR = 100V, di/dt = -10A/ps, dWdt = 20V/ps linear to 67% VDRM, gate bias OV-100W

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Attachment to Public Switched Telephone Network Network and Customer Installation Interface Resistibility of telecommunication switching Equipment to overvoltages and overcurrents Resistibility of subscribers terminal to overvoltage and overcurrents

Note : 1. VREF is expected to be equal t0 0.5'VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT iS not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track vari- ations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V t0 1.OV. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed l.7 for device drain to source voltages from 0.1 t0 1.0.

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