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TP5087TCM5087 TP5087TCM5087 TP5087TCM5087 Datasheet

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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parameter	test conditions	mintyp max	unit
tPLH Propagation delay time, low-to-high-level output	CL = 0 pF('). See Figure 2 and Figure 4	2.5 4
tPHL Propagation delay time, high-to-low-level output	CL = 0 pF('). See Figure 2 and Figure 4	2.5 4	ns
tPLH Propagation delay time, low-to-high-level output		3 5
tPHL Propagation delay time, high-to-low-level output	CL = 15 pF, See Figure 2 and Figure 4	3 5	ns
able time, high-level-to-high-impedance out- tPHZ gutt(p)td'sab"	CL = 5 pF, See Figure 3 and Figure 5	4.1 12	ns
tPLZ Output disable time, low-level-to-high-impedance output(2)	CL = 5 pF, See Figure 3 and Figure 5	2.8 12	ns
	CL = 10 pF, See Figure 2 and Figure 4	0 7	ns
tskewl Pulse width distortion, ltPHL - tPLHI	CL = 150 pF, See Figure 2 and Figure 4	4	ns
Citskewlp- Part-to-part output waveform skew(3)	CL = 10 pF, TA = 75IC, See Figure 2 and Figure 4	0.8 1 4	ns
p	CL = 10 pF, TA = -40IC t0 85IC, See Figure 2 and Figure 4	1 5	ns
Ctskew Same part output waveform skew(3)	CL = 10 pF, See Figure 2 and Figure 4	0 3	ns
able time, high-impedance-to-high-level out- tPZH ~utt(p)tenab"	CL = 10 pF, See Figure 3 and Figure 4	5 12	ns
tPZL Output enable time, high-impedance-to-low-level output(4)	CL = 10 pF, See Figure 3 and Figure 4	4 12	ns
tTLH Rise time (20%-80%)		1 3 5	ns
tTHL Fall time (80%-20%)	CL = 10 pF, See Figure 2 and Figure 4	1 3 5	ns

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DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique.

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	VCEO	35	V
Emitter-collector voltage	V cco	6	v
Collector current	Ic	50	mA
Collector power dissipation	Pc	75	mW
Operating temperature	Topr	25 to +85	C
Storage temperature	Thtg	40 to +85	C
" Soldering temperature	Tsol	260	C

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