TP12HZQE Datasheet| 1 I f)1 | | d l | l' I ! | | F | | Sli;ATINO PLA P O (XJ -(l l27 | | | I | | | | I | l l | S i | T | 1.52.1t | | | | | | | | | | | | | | (1oo) | | 2jO±(J2 | | | | | | | |
TP12HZQE Price| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit | | tr(Voff) tf te | Off-voltage Rise Time Fall Time Cross-over Time | VDD = 80 V ID = 12 A RG = 4.7 I VGS = 5 V (lnductive Load, see fig. 5) | | 12 12 25 | | ns ns ns | | | | | | | |
TP12HZQE on stock| Symbol | CONDITIONS | MIN | TYP | MAX | UNIT | | PldB | Output Power at ldB Gain Compression Point , f = 2.45GHz VDS = 8 V, IDS = 600 mA | 32 5 | 33 | | dBm | | GL | Linear Power Gain, f = 2.45GHz VDS = 8 V, IDS = 600 mA | 12 | 14 | | dB | | IP3 | Intercept Point ofthe 3r'_order Interruodulation, f = 2.45GHz VDS = 8 V, IDS = 600 mA, *PSCL = 20 dBm | | 43 | | dBm | | PAE | Power Added Efficiency at ldB Corupression Power, f = 2.45GHz | | 43 | | % | | IDSS | Saturated Drain-Source Current at VDS = 2 V, Vas = O V | | 1 2 | | A | | | Transconductance at VDS = 2 V, VGS = 0 V | | 850 | | mS | | VP | Pinch-off Voltage at VDS = 2 V, ID = 10 mA | | 1 7{ | | Volts | | BVDGO | Drain-Gate Breakdown Voltage at IDa0 =2.5 mA | 15 | 18 | | VoIts | | Rth | Thermal Resistance | | 7 | | 1C/W | | | | | | |
Tha 10H501 is a quad 2-input OR/NOR gate with one input tram each gate common to pin 12. This MECL 10H part is a functional/pinout duplication of the standard MECL 10K family part, with 100% improvement in propagation delay, and no increase in power-supply current. . Propagation Delay, 1.0 ns Typical . 40 mW Max/Gate (No Load) ,, Improved Noise Margin 150 rrN (Over Operating Voltage and lbmperature Range) . Voltage Compensated * MECL 10K-Compatible
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