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TP116 Datasheet

The KM4164B contains 65,536 memory locations. Six- teen address bits are required to address a particular memory location. Since the KM4164B has only 8 address input pins, time multiplexed addressing is used to in put 8 row and 8 column addresses. The multiplexing is controlled by the timing relationship between the row add ress st robe {RAS), the column add ress st robe (CAS) and the valid address inputs. Operation of the KM4164B begins by strobing in a valid row address with RAS while CAS remains high. Then the address on the 8 address input pins is changed from a row address to a column address and is strobed in by CAS. This is the beginning of any KM4164B cycle in which a memory location is accessed. The specific type of cycle is determined by the state of the write enable pin and various timing relationships. The cycle is ter- minated when both RAS and ~AS have returned to the high state. Another cycle can be initiated after RAS re- mains high long enough to satisfy the RAS precharge time (tRP) requirement.
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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SPECNFNCATIONS (V+ = 1.8 V)
		Test Conditions Otherwise Unless Specified		Limits -40 t0 850C
Parameter	Symbol	V+ = 1.8 V,10%, VIN = 0.4 0r 1.1 Ve	Tempa	Minb	Type	Maxb	Unit
Analog Switch
Analog Signal Ranged	VNO, VNC, VCOM		F ull	O		V+	V
On-Resistance	rON	V+ = 1.8 V, VCOM = 0.2 V/0.9 V INO, INC = 10 mA	Room F ulld		1 8	3 0 4 5	Q
rON Flatnessd	rON Flatness	V+ = 1.8 V, VCOM = O to V+, INO, INC = 10 mA	Room			2
rON Matchd	ArON	V+ = 1.8 V, VCOM = O to V+, INO, INC = 10 mA	Room			0 06
	INO(off), INC(off)	V+ = 2.2 V	Room F ulld	1 -10		1 10
Switch Off Leakage Currentf	ICOM(off)	VNO, VNC = 0.2 V/2.0 V, VCOM = 2.0 V/0.2 V	Room Fulld	1 -10		1 10	nA
Channel-On Leakage Currentf	ICOM(on)	V+ = 2.2 V, VNO, VNC = VCOM = 0.2 V/2.0 V	Room F ulld	1 -10		1 10	nA
Digital Control
Input High Voltage	VINH		F ull	1 1			V
Input Low Voltage	VINL		F ull			0 4	V
Input Capacitanced	Cin		F ull		3 5		pF
Input Currentf	IINL or IINH	VIN=O or V+	F ull	_1		1
Dynamic Characteristics
Turn-On Timed	tON		Room F ulld		55	75 89
Turn-Off Timed	tOFF	VNO or VNC = 1.5 V, RL = 300 Q, CL = 35 pF Figures l and 2	Room Fulld		19	39 40	ns
Break-Before-Make Timed	td	VNO or VNC = 1.5 V, RL = 300 Q, CL = 35 pF Figures l and 2	Room	3			ns
Charge Injectiond	QINJ	CL = 1 nF, VGEN = 0 V, RGEN = 0Q, Figure 3	Room		13		pC
Oft_lsolationd	OIRR		Room		-64
Crosstalkd	XTALK	RL = 50 Q, CL = 5 pF, f =1 MHz	Room		-64		dB
NO, NC Off Capacitanced	CNO(off), CNC(off)	VIN = O or V+, f = 1 MHz	Room		32		pF
Channel-On Capacitanced	CON	VIN = O or V+, f = 1 MHz	Room		78		pF

Description	WH	BW	VW	YW	WW
Emission Color	White	Blue-White	Violet-White	Yellow-White	Warm White

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