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suppliers of TP050F103Z-B-B and PDF data of TP050F103Z-B-B

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
TP050F103Z-B-B	TAIYOYUDEN				5300	Tianke Electronics (HK) Limite.. Contact:Paul Tel:86-755-83206561 Fax: Email: tianke_hk@yahoo.com.cn
TP050F103Z-B-B	TAIYO YUDEN		06+		200000	sanjia technology limited Contact:alfie Tel:86-755-29001147 Fax: Email: sanjiatech@188.com

TP050F103Z-B-B Datasheet

Performance Data (Typical valueS tor battarieS stored at 25 0C for one yea0 System Li/Mr\02 Nominai captu;ity l.2 Ah Nominal voltage 9 V Max. continuous dj$charge Current 120 mA Walght 36 g Volume 22,e5 cms Temperature range -40...+60 Terminals Miniature snap Case material Alumjnium, Mytar LithiUm amount < 2 g transport re$ttlctions no ---
TP050F103Z-B-B Price

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TP050F103Z-B-B on stock

REGISTER READING. M206 registers are read by transmitting a 15 bit word as shown in fig. 4 with R/W low and the address of the register to be read in AO, Al, A2, A3. Bits DO-D7 can be high or low except when register 9 is addressed. If this word is received correctly the SBE line is im- mediately pulled low by the M206 and after 24 Us

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS ID = 250 ccA	3	4	5	V
RDS(on)	Static Drain-source On Resistance	VGS = 10 V ID = 19 A		0.11	0.14	l
ID(on)	On State Drain Current	VDS > ID(on) X RDS(on)max VGS = 10 V	38			A

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