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TP-108-02 Datasheet

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technicalinformation described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
TP-108-02 Price

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
TP-108-02 on stock

ltPGE	OutputGateEnabletoQn	3.5	ns
ltoGD	Output Gate Enable to Qn Driven to GL Designated Level	3	ns

Symbol	Parameter		Value	Unit
Vcc	Supply Voltage		-0.5 t0 4.6	V
VI	DC Input Voltage		-0.5 to Vcc + 0.5	V
Vlc	DC Control Input Voltage		-0.5 t0 4.6	V
Vo	DC Output Voltage		-0.5 to Vcc + 0.5	V
IIKC	DC Input Diode Current on control pin (VIN< OV)		- 50	mA
IIK	DC Input Diode Current (VIN< OV)		±50	mA
IOK	DC Output Diode Current		±20	mA
lo	DC Output Current		±300	mA
IOP	DC Output Current Peak (pulse at lms, 10% duty cycle)		±500	mA
lcc or IGND	DC Vcc or Ground Current		±100	mA
PD	Power Dissipation at Ta=700C (1)	QFN	1120	mW
PD	Power Dissipation at Ta=700C (1)	TSSOP	500	mW
Tstg	Storage Temperature		-65 t0 150	aC
TL	Lead Temperature (10 sec)		300	oC

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