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TOPCELL-1 Datasheet

Parameters 31 DQ.. Unts Conditions
Tj Max.JunctionTemperature Range -40 t0150 oc
T<in Max.StorageTemperatureRange sig -40 t0150 oc
RihjA Max.ThermaIResistancejunction toAmbient 80 OC/w DCoperation Withoutcoolingfins
RihjA TypicaIThermaIResistancejunction toAmbient 34 Oc/w With fin 20 x20 (0.79 x0.79) 1.0 (0.04) thick. Dimensionsin millimeters (inches)
wt ApproximateWeight 1.2(0.042) g(oz)
Case Style C-16


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Core gaps should be uniform. Uneven core gapping, especially with small gap sizes, may cause variation in the primary inductance with flux density (partial saturation) and make the constant current region non-linear. To verify uniform gapping it is recommended that the primary current wave-shape be examined while feeding the supply from a DC source. The gradient is defined as di/dt = V/L and should remain constant throughout the MOSFET on time. Any change in gradient of the current ramp is an indication of uneven gapping.
TOPCELL-1 on stock
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number
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