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TOLD9441MC Datasheet

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TOLD9441MC Price

SYMBOL PARAMETER CONDITIONS RATING UNIT
Vcc DC supply voltage -0.5 to +4.6 V
IIK DC input diode current VI<0 -50 mA
V DC input voltage3 -0.5 to +7.0 V
IOK DC output diode current Vo <0 -50 mA
VOUT DC output voltage3 Output in Off or High state -0.5 to +7.0 V
Output in High state -32
IOUT DC output current Output in Low state 64 mA
Tstg Storage temperature range -65 t0 150 YC


TOLD9441MC on stock

K6R1016C10-12 K6R1016CIC-12 K6R1016CIC-15
Parameter Symbol Min Max Min Max Min Max Unit
Write Cycle Time twc 10 12 15 ns
Chip Select to End of Write tcw 7 8 9 ns
Address Set-up Time tAS 0 0 O ns
Address Valid to End of Write tAW 7 8 9 ns
Write Pulse Width(OE High) tWP 7 8 9 ns
Write Pulse Width(OE Low) tWP1 10 12 15 ns
UB, LB Valid to End of Write tBW 7 8 9 ns
Write Recovery Time tWR O O O ns
Write to Output High-Z tWHZ O 5 O 6 O 7 ns
Data to Write Time Overlap tDW 5 6 7 ns
Data Hold from Write Time tDH 0 0 O ns
End Write to Output Low-Z tow 3 3 3 ns


11 DIN Valid to SCK Setup q 55 1 5 ns
12 DIN Valid to SCK Hold q 0 10 ns
13 SCK High Time (Note 61 q 30 14 ns
t4 SCK Low Time (Note 61 q 30 14 ns
15 CS/LD Pulse Width (Note 61 q 1 00 27 ns
16 LSB SCK High to CS/LD High (Note 61 q 30 2 ns
17 CS/LD Low to SCK High (Note 6) q 20 21 ns
19 SCK Low to CS/LD Low (Note 61 q 0 5 ns
111 CS/LD High to SCK Positive Edge (Note 61 q 20 0 ns
SCK Frequency Square Wave (Note 6) q 16.7 MHz


 
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