TOH2600DG14FRN Datasheet| VIN (BIAS) | IN+, IN- Bias Voltage | Max Gain (Note 6) | 1.151.3 1.5 | V | | IIL(PGA) | PGAO, PGAl, PGA2, PGA3 Input Current | VIN= 0.6V | 20 | | | IIH(PGA) | PGAO, PGAl, PGA2, PGA3 Input Current | VIN= 5V | 20 | | | IOUT | OUT+, OUT- Current | All Gain Settings | 20 | | | ICC | VCC Supply Current | All Gain Settings (Note 4) | 44 100 | | | | | | |
TOH2600DG14FRN Price SUPPLY VOLTAGE - VCCF = VCCS = 2.7V t0 3.6V: for Program, Erase and Read ACCESS TIME: 100ns LOW POWER CONSUMPTION - Read: 40mA max. (SRAM chip) - Stand-by: 30pA max. (SRAM chip) - Read: 10mA max. (Flash chip) - Stand-by: 100pA max. (Flash chip) FLASH MEMORY 8 Mbit (1Mb x 8) BOOT BLOCK ERASE PROGRAMMING TIME: 10ps typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte - Status Register bits and Ready/Busy Output SECURITY PROTECTION MEMORY AREA INSTRUCTION ADDRESS CODING: 3 digits MEMORY BLOCKS - Boot Block (Top or Bottom location) - Parameter and Main Blocks BLOCK, MULTI-BLOCK and CHIP ERASE ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code, M36W108AT: D2h - Device Code. M36W108AB: DCh TOH2600DG14FRN on stock| | | | VcuuP =480V | | | | | | | | lc=12A | | | | | | | | | | | | | | | | | | | | | | | j | | | | | | 1,21 25'5/ | | | | | | | | | | | | | | | | | | | | | r | | | | | | | | | Ls-c | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
| Signal Present (fo) | Mode | OUT1 | OUT2 | OUT3 | OUT4 | D425 | Strobe | PD | OE | EN | | Any | X | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 1 | 0 | | Any | X | High Impedance | X | 0 | 0 | 1 | | Any | X | High Impedance | 0 | 0 | 0 | 0 | | Any | X | High Impedance | X | 1 | 0 | X | | | | | | | | | | | |
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