TNY254PN DIP Datasheet| Switching Specifications CL = 50pF, Input tr, tf = 6ns, RX = 10KI , CX = 0 (Continued) | | | | | | | 250C | 400C TO 850C | .55aC TO 1250C | | | | PARAMETER | SYMBOL | TEST CONDITIONS | vcc (v) | MIN | TYP | MAX | MIN | MAX | MIN | MAX | UNITS | | R to Q | tPHL | CL= 50pF | 4.5 | | | 40 | | 50 | | 60 | ns | | CL= 15pF | 5 | | 17 | | | | | | ns | | R to Q | tPLH | CL= 50pF | 4.5 | | | 50 | | 63 | | 75 | ns | | CL= 15pF | 5 | | 21 | | | | | | ns | | Output Transition Time | tTLH, tTHL | CL= 50pF | 4.5 | | | 15 | | 19 | | 22 | ns | | Output Pulse Width RX = 10k, CX = O.lccF | T | CL= 50pF | 5 | 0 63 | | 0.77 | 0 602 | 0.798 | 0.595 | 0.805 | ms | | Output Pulse Width Match, Same Package | | | | +1 | | | | | | % | | Power Dissipation Capacitance (Notes 8, 9) | CPD | CL= 15pF | 5 | | 134 | | | | | | pF | | Input Capacitance | cl | CL= 50pF | | 10 | | 10 | | 10 | | 10 | pF | | NOTES: 8. CPD is used to determine the dynamic power consumption, per one shot. 9. PD = (CPD + CX) VCC2 fi * (CL VCC2 f0) where fi = input frequency, f0 = output frequency, CL = output load capacitance, CX = external capacitance Vcc = supply voltage assuming fi 1 r | | Test Circuits ,i tr = 6ns -- | and Wavet l l | orms -- tf = 6ns tr = 6ns \I - - | l l | tf= 6ns 4ll | | INPUT _ | f 10% | rr CC INPUT ._ k- akin ! | f -0.3V | U- ~_n | | tTHL | 1 | | | ltTLH tTHL_ | | | | | ltt | | INVERTING | | | F | J | | r | | | uuirui uuirui -- tPHL.__- tPLH._ + tPHL.__ tPLH._ FIGURE 6. HC AND HCU TRANSITION TIMES AND PROPAGA FIGURE 7. HCT TRANSITION TIMES AND PROPAGATION TION DELAY TIMES, COMBINATION LOGIC DELAY TIMES, COMBINATION LOGIC | | | | | | | | | | | | | | | | | | | | | |
TNY254PN DIP Price Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. TNY254PN DIP on stock| Parameter | Symbol | Conditions | Values | Unit | | min | typ. | max | | Inverse diode continuous forward current | s | Tc=250C | | | 4.5 | A | | Inverse diode direct current, pulsed | /SM | | | 9 | | Inverse diode forward voltage | VSD | VGS=OV, /F=/S | | 1 | 1.2 | V | | Reverse recovery time | trr | VR=350V, /F=/S , | | 900 | 1 530 | ns | | Reverse recovery charge | Qrr | diF/df=lOOA/ps | | 3.2 | | IJC | | | | | | | |
Note 3: Fnr military temperature range parts, consult the factory. Note 4: The output pins of ON, LCW LINE PFO, WDO, RES and RESEI- have weak internal pullups of typically 3ffA However, externd pull- up resistors may be used when higher speed is required.
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