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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
TNR8NTJ331V         3830 


TNR8NTJ331V         3830 
    S&L Technology Development co..
  • Contact:Jennifer Zeng
  • Tel:86-755-83511882
  • Fax:86-755-83511886
  • Email: jennifer@xkzd.net


TNR8NTJ331V     09+    3830 
    Nuoxinyuan Electronics Co.,Ltd
  • Contact:Regina
  • Tel:86-755-83957733
  • Fax:86-755-83956848
  • Email: regina@nxy-ic.com
TNR8NTJ331V         5400 



TNR8NTJ331V Datasheet
Transmit-to-Receive Timing The maximum time required to switch from the OOK or ASK trans- mit mode to the receive mode is 3*tBBC, where tBBC iS the BBOUT- CMPIN coupling-capacitor time constant. When the operating tem- perature is limited t0 60 0C, the time required to switch from transmit to receive is dramatically less for short transmissions, as less charge leaks away from the BBOUT-CMPIN coupling capacitor.
TNR8NTJ331V Price

Parameter Symbol Min Max Unit
Data Transfer from Cell to Register tR 12 US
ALE to RE Delay tAR 10 ns
CLE to RE Delay tCLR 10 ns
Ready to RE Low tRR 20 ns
RE Pulse Width tRP 25 ns
WE High to Busy tWB 100 ns
Read Cycle Time tRC 50 ns
RE Access Time tREA 30 ns
CE Access Time RE High to Output Hi-Z CE High to Output Hi-Z RE or CE High to Output hold RE High Hold Time Output Hi-Z to RE Low WE High to RE Low tCEA tRHZ tCHZ tOH tREH tIR tWHR 45 30 20 15 15 0 60 ns ns ns ns ns ns ns
Device resetting time(Read/Program/Erase) tRST 5/10/500(1) US


TNR8NTJ331V on stock

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Rtr, j-ris Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air 55 4.0 5.5 K/W K/W K/W


GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable ofproviding 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes input and output prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder sealed package. CASE OUTLINE 55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 250C 29 Watts Maximum Voltage and Current BVces Collector to Emiter Voltage 45 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic CollectorCurrent l.5 Amps Maximum Temperatures Storage Temperature - 65 to + 2000C Operating Junction Temperature + 2000C