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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
T495X476M202ATE100	KEMET		07+		30000	HuiYuan Electronic (Asia)Limit.. Contact:chen Tel:86-755-23956858 Fax:86-755-23956577 Email: chen@huiyuan-elelc.com

T495X476M202ATE100 Datasheet

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
Vr	Regulation Voltage	Tj = -40IC for L9444VB for L9448VB for L9480VB	14.49 14.36 14.75	14.79 14.66 15.05	15.05 14.96 15.35	V V V
		Tj= 25YC	14.10	14.40	14.70	V
		Tj = 125IC for L9444VB for L9448VB for L9480VB	13.50 13.70 13.10	13.80 14.00 13.40	14.10 14.30 13.70	V V V
CT	Temperature Coeff. of the Regulation Voltage	for L9444VB for L9448VB for L9480VB		-6 -4 - 10		mVnC mV/IC mV/IC
eCr	Error on Nominal Temperature Coeff.			±30		%
Vr	Load Regualtion	0.1 In < lalt < 0.9 In (note l)		250		mV
Vsu	Control Circuit Minimum Start up Voltage	Measured at Supply Pin		2	3	V
Vsd	Shutdown Voltage (dump protection threshold)			22		V
Vsatl	Output Saturation Voltage	lfield=4Ap		1.2	2	V
Vsat 2	Start Up Saturation Voltage	lfield = 200 mA		0.7	1	V
lq	Quiescent Current	Field Off		20		mA
Is	Supply Current	lfield=4Ap		50		mA
Ifs	Field Pin Sink Current	Field Off Field Pin @ 16 V			5	mA
Vi CLAMP	Low Energy Clamping Zener Voltage	lclamp = 50 mA		120		V
fsw	Switching Frequency	01 In < lalt < 0.9 In	30		1000	Hz

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1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS. 2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source voltage becoming positive.
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N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive and general purpose switching applications.

NOTES: 1. The KS88C0716 can replace the KS88C0116. Their functions are mostly the same, but there are some differences Table l-1 shows the comparison of KS88C0716 and KS88C0116.

Diode continous forward current	s	Tc=25 0C		48	A
Diode pulse current	S,pulse	Tc=25 0C		200	A
Diode forward voltage	VSD	V GS=O V, /F=48 A, Tj=25 0C	0.87	1.1	V
Reverse recovery charge	Qrr	V R=15 V, /F=/S, diFldt=400 A/ps		1 0	nC

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