| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| STYN910 | TO-220 | ST | 06+ |
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| STYN910 | ST | 15200 | 08+ |
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STYN910 Datasheet 1/ Short circuit may be to ground or either power suppLy. Rating appLied to +250c ambient temperature. 2/ For case outLine H derate at 5.4 mkl/QC above TA = +250C, for case outLine P derate at 8.4 mU/oC above TA = +250C, for case outLine 2 derate at 12 mCJ/oC above TA = +250C. STYN910 Price able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The mem- ory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms. The CY27C256 0ffers the advantage of lower power and su- perior performance and programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current re- quirements allow for gang programming. The EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each EPROM is also tested for AC perfor- mance to guarantee that after customer programming, the product will meet both DC and AC specification limits. STYN910 on stock
co Build in Biasing Circuit; To reduce using parts cost & PC board space. co Low noise characteristics; (NF = 2.1 dB typ. at f= 900 MHz) co Withstanding to ESD; Build in ESD absorbing diode. Withstand up t0 200V at C=200pF, Rs=0 conditions |
