ADMap-4  > STV8206D

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STV8206D Datasheet

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STV8206D Price

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STV8206D on stock

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4.0 V
lc Device Current 15 A
PDISS Power Dissipation 270 W
TJ Junction Temperature +200
TSTG Storage Temperature - 65 to +150 YC


Applications Information Supply Filtering A 0.1 ~F t0 1 ~F bypass capacitor from IN to GND, located at the device is strongly recommended to control supply tran- sients. Without a bypass capacitor, an output short may cause suicient ringing on the input (from supply lead induc- tance) to destroy the internal control circuitry. Input transients must not exceed the absolute maximum supply voltage ( VtN max = 7.5V) even for a short duration. 2.7V t0 7.5V