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STV769A Datasheet

	Ta=25C
	IB=-lOmA
		9mA
		8mA 7mA
		6mA
		5mA
		4mA
Z		3mA
		2mA
		ImA

STV769A Price

Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability
STV769A on stock

INPUTS			OUTPUT
CLEAR	D	CLOCK	Q	FUNCTION
L	X	X	L	CLEAR
H	L	J	L
H	H	J	H
H	x	z	Qn	NO CHANGE

SPECIFICATNONS (Tj = 250C UNLESS OTHERWNSE NOTED)
Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Static
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 yA	1 0		3.0	V
Gate-Body Leakage	IGSS	VDS = 0 V, VGS =20 V			100	nA
		VDS = 30 V, VGS = O V			1
Zero Gate Voltage Drain Current	IDSS	VDS = 30 V, VGS = O V, Tj = 550C			5	yA
On-State Drain Currenta	ID(on)	VDS > 5 V, VGS =10 V	30			A
		VGS = 10 V, ID = 12.5 A		0 008	0.00975	Q
Drain-Source On-State Resistancea	rDS(on)	VGS = 4.5 V, ID = 10.0 A		0 011	0.01375	Q
Forward Transconductancea	9fs	VDS = 15 V, ID = 12.5 A		40		S
Diode Forward Voltagea	VSD	Is = 2.7 A, VGS = O V		0 73	1.1	V
Dynamicb
Total Gate Charge	Qg			10	15
Gate-Source Charge	Ogs	VDS = 15 V, VGS = 4.5 V, ID = 12.5 A		3 5		nC
Gate-Drain Charge	Ogd	VDS = 15 V, VGS = 4.5 V, ID = 12.5 A		2 6		nC
Gate Resistance	Rg		0 5	1 6	2.7	Q
Turn-On Delay Time	td(on)			15	25
Rise Time	tr	VDD =15 V, RL = 15 Q		5	10
Turn-Off Delay Time	td (off)	ID 1 A, VGEN = 10 V, Rg = 6 Q		45	70	ns
Fall Time	tf	ID 1 A, VGEN = 10 V, Rg = 6 Q		8	15
Source-Drain Reverse Recovery Time	trr	IF = 2.7 A, di/dt = 100 A/ys		30	60

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