STV3550 Datasheet 9.0 General Description The K4H510838D / K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 words by 8/16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up t0 400Mb/s per pin. I/0 transactions are possible on both edges of DQS. Range of operating fre- quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem- ory system applications. STV3550 Price| | | | Ratings | | | Symbol | Items | Conditions | Min | Typ. | Max | Unit | | IDRM | Repetitive Peak Off-State Current | VAK = VDRM or VRRM ; RGK = 1000 Q Tc = 25 aC Tc = 125 0C | | | 10 200 | | | VTM | Peak On-State Voltage (1) | ( ITM =3 A, Peak ) | | 1 2 | 1 7 | V | | IGT | Gate Trigger Current (2) | VAK = 6 V, RL=100 Q Tc = 25 aC Tc = - 40 aC | | | 200 500 | | | VGT | Gate Trigger Voltage (2) | VD = 7 V, RL=100 Q Tc = 25 aC Tc = - 40 aC | | | 0 8 1 2 | V | | VGD | Non-Trigger Gate Voltage (1) | VAK= 12 V, RL=100 Q Tc = 125 0C | 0 2 | | | V | | dv/dt | Critical Rate of Rise Off-State Voltage | VGM = 0.67VDRM, Exponential waveform , RGK = 1000 Q Tj = 125 0C | 200 | | | V/Us | | di/dt | Critical Rate of Rise On-State Current | ITM = 3A, lg = 10mA | | | 50 | Al,us | | IH | Holding Current | VAK = 12 V, Gate Open Tc = 25 aC Tc = - 40 aC | | 2 | 5 0 10 | mA | | RthO_c) | Thermal Impedance | Junction to case | | | 15 | oC/w | | RthO_a) | Thermal Impedance | Junction to Ambient | | | 125 | oc/w | | | | | | | |
STV3550 on stock| | | | | VG Pu | s=-4 lsed | | | | | | | | | | Ta:125Y_ ' Ta:751C / Ta:251L Ta:-25'r./ | | | | | | | | | | | | | | | | | | | | | |
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