STV0299-NIM Datasheet| (O OfOf ^ AA ^^^ | | vvv | vvv | | J | 1 | | | | | 3 0 0 0 0 0 | r | a | > II LL Of > | l- - (o | | | | | < J | | ll L = | yq | | | 7 | l r | | - Vv | Of AA^ | | AA^ | _VVv o < { A^ | | VVv-VVv . +N _ | | _N ' L ^ ^ ^ | | | | | | | | | |
STV0299-NIM Price| Parameter | Symbol | Rating | Unit | | Collector-base voltage (Emitter open) | VCBO | 40 | V | | Collector-emitter voltage (E-B short) | VCES | 40 | V | | Emitter-base voltage (Collector open) | VEBO | 5 | V | | Collector current | Ic | 100 | mA | | Peak collector current | ICP | 300 | mA | | Collector power dissipation | Pc | 125 | mW | | Junction temperature | Ti | 125 | oC | | Storage temperature | Tstg | -55 tO +125 | OC | | | | |
STV0299-NIM on stock The Sample-Sleep intervalis determined by the programming of the "SampDiv' bits within the ADconfig register, together with the "SSLPdiv" bits within the OpMode register. The sample intervalis 2SampDivx 2SSLPdivx 0.5sec. The possible Sample- Sleep interval time therefore ranges from a minimum of 0.5sec to over 136 minutes. | Symbol | Parameter | Test Conditions | Min | Typ. | Max | Units | | td(off, | Turn-off delay time | le = 600A | | 1500 | | ns | | tf | Fall time | VGE = +15V | | 170 | | ns | | EOFF | Turn-off energy loss | VCE = 900V | | 270 | | mJ | | td(on, | Turn-on delay time | RGcON, = RGcOFF, = 3.3 I | | 400 | | ns | | t | Rise time | L ~ 100nH | | 250 | | ns | | EON | Turn-on energy loss | | 350 | | mJ | | Q | Diode reverse recovery charge | Diode arm | IF = 600A, | | 650 | | ccC | | IGBT arm | VR = 50% VCES, | | 250 | | ccC | | I | Diode reverse recovery current | Diode arm | dIF/dt = 3000NccS | | 900 | | A | | IGBT arm | | 400 | | A | | E | Diode reverse recovery energy | Diode arm | | 380 | | mJ | | IGBT arm | | 150 | | mJ | | | | | | | | |
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