STTLDFMM-236，there are the best STTLDFMM-236 suppiers all over the world here.These are the list and detailed contact method of STTLDFMM-236 suppliers all over the world as follows.You can buy or get informations of STTLDFMM-236 through email , message or tel.

suppliers of STTLDFMM-236 and PDF data of STTLDFMM-236

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
STTLDFMM-236	.	.	.	.	650	Yingxinyuan Intl(Group) ltd. Contact:celina Tel:86-755-83247111 Fax:86-755-83342111 Email: yixy@yxsmd.com
STTLDFMM-236	.		.		1300	Yingxinyuan Intl(Group) ltd. Contact:celina Tel:86-755-83247111 Fax: Email: yixy@yxsmd.com

STTLDFMM-236 Datasheet

1 10 years mmimum data retention in the absence of external power ' Data is automatically protected during power loss ' Power supply monitor resets processor when Vcc power loss occurs and holds processor in reset during Vcc ramp-up ' Battery monitor checks remaining capacity daily I Read and write access times as fast as 70 ns I Unlimited write cycle endurance ' Typical standby current 50A ' Upgrade for 128k x 8 SRAM, EEPROM or Flash ' Lithium battery is electrically disconnected to retain freshness until power is applied for the first time ' Full+10% Vcc operating range (DS1345Y) or optional +5% Vcc operating range (DS1345AB) ' Optionalindustrialtemperature range of -40'IC to +85'fC, designated IND ' New PowerCap Module (PCM) package - Directly surface-mountable module - Replaceable snap-on PowerCap provides lithium backup battery - Standardized pinout for all nonvolatile SRAM products - Detachment feature on PowerCap allows easy removal using a regular screwdriver
STTLDFMM-236 Price

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STTLDFMM-236 on stock

Item	Symbol	Condition	mm	typ.	max	Unit
	ICES	VCE = +60V, IE = 0			±400	A
Collector cutoff current	ICFO	VCE = +30V, IB = 0			±700	A
Ermtter cutoff current	IEBO	VEB=+5V,IC=O			±1	mA
Collector-emitter voltage	VCEO	Ic = +30mA, IB = O	±60			v
	hl-El	VCE = +4V, Ic = +1A	70		250
DC current gain	hFE2	VCE = +4V, Ic = +3A	15
Base-emitter voltage	VBE	VCE = +4V, Ic = +3A			±2	v
Collector-emitter saturation voltage	VCF. (saL)	Ic = +4A, IB = +0.4A			±1.5	v
Transition frequency	fT	VCE = +5V, lC = +0.5A, f =1MHz		20		MHz
IUmOn tlme	ton		(typ.) NPN:0.3, PNP:0.2			S
Storage tune	tstg	Ic = +4A, IBl= +0.4A, IB2 =0.4A	(typ.) NPN:1.2, PNP:0.5			S
Fall time	tf	Ic = +4A, IBl= +0.4A, IB2 =0.4A	(typ.) NPN:0.4, PNP:0.2			S

This integrated circuit can be damaged by ESD. Texas Instru- ments recommends that allintegrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degrada- tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

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