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STRIP2X10 Datasheet
DescrIptIon FREDFET with fast-recowry reverse diode, N-channel, enhancement mode. S Case PlastIc package 14A3 1n accordance wIth DIN 41 869, or T0 220 AB In accordance with JEDEC. Thca drain terminalis conductively connected to the mounting flange. Approx. weight 2 g
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Minimum threshold voltage is low, only 0.7V or lV, enabling the MOSFETs to provide optimum performance from a low voltage source. To ensure the device suitability for low voltage applications, drain to source voltage is specified at 20V or 30V. To minimise on-state losses, and im prove efficien cy in in low frequency drive applications, the on-resistance (ROS(ON is low across the range. For example, the ZXM64P03X has an RDS(ON) of only 100m I at a gate to source voltage of 4.5V.
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DIMENSIONS
INCHES MILLIMETERS
SYMBOL MIN MAX MIN MAX
A 0 094 0 110 2 40 2 80
B 0 050 1 27
C 0 015 0 030 0 38 0 75
D 0 291 0 335 7 40 8 50
E O' 48 3 75
F 0 118 0 134 3 00 3 40
G 0 413 0 472 10 50 12 00
H 0 618 15 70
J 0 024 0 035 0 62 0 90
K 0 089 2 25
L O' 77 4 50
M 0 045 0 055 1 14 1 40
N 0 083 2 10