STP40H100 Datasheet Description M/A-COM's HIPAX PIN diodes are ciesigned for service in switch and attenuator applications requiring high power handling and low distortion. HIPAX PIN diodes incorpo- rate a fully passivated PIN diode chip re.sulting in extremely low reverse leakage current. all high vokage HIPAX PIN diode.s are specified at l pA reverse current at the voltage rating. The chip is full face bonded to refrac- tory metal pins on both anode and cathode. The result is a low los.s PIN diode with low thermal resistance due to symmetrical thermal paths. STP40H100 Price| | mm | inch | | DIM | MIN | TYP | MAX | MIN | TYP | MAX | | A | | | 1.75 | | | 0.068 | | al | 0.1 | | 0.2 | 0.003 | | 0.007 | | a2 | | | 1.65 | | | 0.064 | | b | 0.35 | | 0.46 | 0.013 | | 0.018 | | bl | 0.19 | | 0.25 | 0.007 | | 0.010 | | c | | 0.5 | | | 0.019 | | | c1 | 450 | ltyp.) | | D | 8.55 | | 8.75 | 0.336 | | 0.344 | | E | 5.8 | | 6.2 | 0.228 | | 0.244 | | e | | 1.27 | | | 0.050 | | | e3 | | 7.62 | | | 0.300 | | | F | 3.8 | | 4.0 | 0.149 | | 0.157 | | G | 4.6 | | 5.3 | 0.181 | | 0.208 | | L | 0.5 | | 1.27 | 0.019 | | 0.050 | | M | | | 0.68 | | | 0.026 | | S | 8fr | iax1 | | | | | | | |
STP40H100 on stock| Post-Radlatlon ElectrIcal Speclflcatloris TC = +250C.Unless Othervdse Speclfled | | | | | | | L.rrs | | | | PARAMETER | SYMBOL | TYPE | TEST CONDITIONS | | UAX | UNrTS | | Draln-Sourco (Note 4, 6) | BVOSS | 2N7ZBDR | VGS=O,lO=lmA | 200 | | V | | (Note5.6) | BVDSS | 2N7293H | VG$ - O,ID -1mA | 190 | | V | | Gato-Souna (Note 4, 6) f~^mh | VGS{th) | 2N7293DR | VGS _ VDS,ID.1mA | 2.0 | 4.0 | V | | (Nota3.5.6) | VGS(th) | 2N7293H | VGS= VDSlD1mA | 1.5 | 4.5 | V | | Oate-Body(Nota 4, -L^-- | lGSSF | 2N72930R | VGS _ 20V,VOS O | | 100 | nA | | (Note5.6) | IOSSF | 2N7293H | vos - 20V, VDS = O | | 200 | nA ' | | eeUeaody (Note 2, 4, 6) | laSSR | 2N7293DR | VS$ =.20V, VLB = O | | 100 | nA | | -- (Not02 | IGSSR | 2N7293H | VSS 20V, VDS = O | | 200 | nA | | Zmate Voltage (Nota 4, r_ | lDSS | 2M293DR | VGS = O, VOS = 160V | | 25 | | | (Nat05.6) | IDSS | 2N7293H | VGS = O. VOS = 160V | | 100 | IlA | | Draln-Source (Not0 1. 4 6) | VDS(on) | 2N7293DR | VGS =10V,ID = 27A | | 2.7 | V | | Wotal.5.6 | | 2N7293H | \fGS.16V,ID = 27A | | 3.78 | V | | Draln.Sourco(Nat01. 4, 6) ^b^^j^^ | ROS(on) | 2N7293D,R | VGS - 10V.lD =17A | | O1 | n | | (Notel.516) | RDS(on) | 2N7293H | VOS,14V,ID = 17A | | 0.140 | n | | NOTES: 1Pulse test, 300ps max 2Abt}olutoU0 3Gamma300KRAO(SO 4.GammailOKRAO(Sl) for'V,100KRAD(SI) tor'w. tkurron;1E13 '5. Gamma- 1000KFWXSO.Neutron I lE13 6.Ins~tu Gamma bIas mustsampled for both VOS - +10V, VDS.OV and VGSl OV, VDS - 8076 BVOSS 7.aamrMdata takan 11/15/89 0n TA 17652 devoyGE ASTRO SPACE; EMCtSURVIVABILflY LABORATORY; KING OF PRUSSIA, PA19401 8.SIngle ewnt draIn bumout testing by Tltus, J.L, etorNWSC, Crane¨atBrookhavan Nat Lab. Dec 11-14, 1989 9.Neutron dorlvatlon, HARRIS ApplicatIon note AN-8831, Oct 1988 | | | | | | | | | |
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