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STOCK-5 Datasheet
the commercial Texas Instruments TMS27C010. It uses CMOS technology for high speed and simple interface with MOS and bipolar circuits. All inputs, including program data inputs, can be driven by Series 74 TTL circuits. Each output can drive one Series 74 TTL circuit without extemal resistors. The data outputs are three-state for connecting multiple devices to a common bus. All programming signals are TTL level. For programming outside the system, existing EPROM programmers can be used. The patented radiation hardened RAD-PAK~ technology incorporates radiation shielding in the microcircuit package. The 27C010RP has a total dose survivability ofgreater than 100 krad (Si). Capable of surviving in space environments, the 27C010RP is ideal for satellite, spacecraft, and space probe missions. This product is offered as a one time programmable product. Itis available in Class S packaging and screening.
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Circuit diagrams and other information relating to SMSC products are included as a means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. Although the information has been checked and is believed to be accurate, no responsibility is assumed for inaccuracies. SMSC reserves the right to make changes to specifications and product descriptions at any time without notice. Contact your local SMSC sales office to obtain the latest specifications before placing your product order. The provision of this information does not convey to the purchaser of the described semiconductor devices any licenses under any patent rights or other intellectual property rights of SMSC or others. All sales are expressly conditional on your agreement to the terms and conditions of the most recently dated version of SMSC's standard Terms of Sale Agreement dated before the date of your order (the "Terms of Sale Agreement"). The product may contain design defects or errors known as anomalies which may cause the product's functions to deviate from published specifications. Anomaly sheets are available upon request. SMSC products are not designed, intended, authorized or warranted for use in any life support or other application where product failure could cause or contribute to personal injury or severe property damage. Any and all such uses without prior written approval of an Officer of SMSC and further testing and/or modification will be fully at the risk of the customer. Copies of this document or other SMSC literature, as well as the Terms of Sale Agreement, may be obtained by visiting SMSC's website at http://www.smsc.com. SMSC is a registered trademark of Standard Microsystems Corporation ("SMSC"). Product names and company names are the trademarks of their respective holders.
STOCK-5 on stock

Symbol Characteristic Min Typ. Max Units Test Condition
BVoss Drain-Source Breakdown Voltage 900 v VCS=OV,ID=250IJA
ABV/AT Breakdown Voltage Temp. Coeff. 1.10 V/ oC ID=250jjA See Fig 7
VGS(th) Gate Threshold Voltage 2.0 3.5 v VDS=5V,ID=250UA
Gate-Source Leakage , Forward 100 VGS=30V
IGSS Gate-Source Leakage , Reverse -100 nA VGS=-30V
25 VDS=900V
IDSS Drain-to-Source Leakage Current 250 LA VDS=720V,TC=125 0C
RDScon) Static Drain-Source On-State Resistance 2.3 Q VCS=10V,ID=3A @*
9fs Forward Transconductance 4.28 Q VDS=50V,ID=3A @
Cl Input Capacitance 1560 2030 pF VGS=OV,VDS=25V,f =1MHz
Co Output Capacitance 135 160
C Reverse Transfer Capacitance 54 63 See Fig 5
td(on) Turn-On Delay Time 22 55
tr Rise Time 40 90 VDD=450V,ID=6A,
td(off) Turn-Off Delay Time 99 210 ns RG=11.5Q
tf Fall Time 32 75 See Fig '13 @@
Qg Total Gate Charge 68 89 VDS=720V,VCS=10V,
Qg Gate-Source Charge 11.5 nC ID=6A
Qgd Gate-Drain(" Miller" ) Charge 30.9 See Fig 6 & Fig '12@@|


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