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STMSM6T6V8CA Datasheet

Name Mode Address Data
Read 101 01000 AOAiA;ZA3A4As00 Oo~D7Da~Dis Read from addresses < Ao~ As>
Write 10100100 AOAIAZA3A4A500 DO~D7Da~D15 Write imo addresses < Ao~ As>
Write enable 10100011 xxxx×xxx Write operatian is enabled.
Wriie disable 10100000 xxxx×xxx Write operation is disabled.
00×xx×X× 0 IBusyJ 1 [Ready) BusV flag
Siatus output 101 01001 10XXXXX× O {Enablel 1 (Diaablel Write enable flag
OIXXXXXX O ICorrectl 1 {lncorrecl) ECC tlag


STMSM6T6V8CA Price

Limits
Symbol Parameter Test conditions Min Typ Max Unit
V (BR) DSS Drain-source breakdown voltage ID = ImA, VGs = OV 450 v
V (BR) GSS Gate-source breakdown voltage IG = +100ccA, VDS = OV ±30 v
IGSS Gate-source leakage current VGS = +25V, VDS = OV ±10
IDSS Drain-source leakage current VDS = 450V, VGS = OV 1 mA
VGS (th) Gate-source threshold voltage ID = 1rTiA, VDS = 10V 2 3 4 v
rDS (ON) Drain-source on-state resistance ID = 7A, VGS = 10V 0 40 0.52
VDS (ON) Drain-source on-state voltage ID = 7A, VGS = 10V 2 8 3 6 v
yfs Forward transfer admittance ID = 7A, VDS = 10V 4 5 7 0 S
Ciss Input capacitance 1500 pF
Coss Output capacitance VDS = 25y VGS = Oy f= 1MHz 180 pF
Crss Reverse transfer capacitance 30 pF
td (on) Turn-on delay time 30 ns
tr Rise time VDD = 200V ID = 7A, VGS = 10V, RGEN = RGS = sol 50 ns
td (off) Turn-off delay time 130 ns
tf Fall time 50 ns
VSD Source-drain voltage Is = 7A, VGS = OV 1 5 2 0 v
Rth (ch-c) Thermal resistance Channel to case 0 83 IC/W


STMSM6T6V8CA on stock

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Designed for RF and Video Switching the CWB201 is manufactured using Calogic's high speed CMOS combined with DMOS transistors in a monolithic design resulting in superior performance characteristics. This quad SPST switch array has extensive applications where high frequency video, audio or digital signals are switched or routed. The CWB201 is TTL compatible which is of great benefit to to designs that require constant logic switching over a wide range of supply voltages and temperature without a separate power supply.