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STM811SW16F. Datasheet

NOTES iInitial accuracy includes temperature hysteresis effect. 2Line and load regulation specifications include the effect of self-heating. 3Long_term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 1, with an LTPD of l.3 Specifications subject to change without notice.
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Parameter	SD500N/R	U nits	Conditions
IF(AV) Max. average forward current	475	A	1800 conduction, half sine wave
@ Case temperature	55	oc	1800 conduction, half sine wave
IF(AV) Max. average forward current	300	A	1800 conduction, half sine wave
@ Case temperature	100	oc	1800 conduction, half sine wave
lr_..o, Max. RMS forward current F(RMS)	745	A	DC @ 400C case temperature
IFSM Max. peak, one-cycle forward,	7500	A	t= 10ms	No voltage
non-repetitive surge current	7850		t= 8.3ms	reapplied
	6310		t= 10ms	50% VRRM
	6600		t= 8.3ms	reapplied	Sinusoidal half wave,
12t Maximum l2t for fusing	281		t= 10ms	No voltage	Initial Tj = Tj max.
	257		t= 8.3ms	reapplied
	199	KA2S	t= 10ms	50% VRRM
	182	KA2S	t= 8.3ms	reapplied
12 d Maximum I2St for fusing	2810	KA2 gs	t = 0.1 t0 10ms, no voltage reapplied
VF(TO), Low level value of threshold voltage	0 88	V	(16.7% x * x IF(AV) < I < * X IF(AV' Tj = Tj max.
VF(T0)2 High level value of threshold voltage	0 97	V	(l > * X IF(AV'TJ = Tj max.
rfi Low level value of forward slope resistance	0 78	m J	(16.7% x * x IF(AV, < I < * X IF(AV' Tj = Tj max.
rf2 High level value of forward slope resistance	0 72	m J	(l > # X IF(AV'TJ = Tj max.
VFM Max. forward voltage drop	1 66	V	Ink= 1000A, Tj = Tj max, tn = 10ms sinusoidal wave

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		SUPPLY VOLTAGE: -1500 (V) RISE TIME: 1.775 (ns)
	I	FALL TIME: 6.984 (ns) LOAD RESISTANCE: 50 I III
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Flexible power operating modes allow low-power monitoring of battery conditions during system full operating and standby conditions: - Run: Continuous Conversion; 85ljA typ. - Sample: Sample interval from 0.5-64s @ 45pA typ. - Sample-Sleep: Sample interval from 0.5-138s min. @ 20pA typ.

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