STM6316AT，there are the best STM6316AT suppiers all over the world here.These are the list and detailed contact method of STM6316AT suppliers all over the world as follows.You can buy or get informations of STM6316AT through email , message or tel.

suppliers of STM6316AT and PDF data of STM6316AT

Part Numbert

Mfg

Packt

D/C

Descriptiont

Qty

Company/Contact

STM6316AT Datasheet

SPECIFICATIONS (Tj = 250C UNLESS OTHERWISE NOTED)
Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Static
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0 V, ID = -250 yA	-60			V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = -250 yA	-2.0	-3.0	-4.0	V
Gate-Body Leakage	IGSS	VDS = 0 V, VGS =20 V			100	nA
		VDS = -60 V, VGS = 0 V			-1
Zero Gate Voltage Drain Current	IDSS	VDS = -60 V, VGS = 0 V, Tj = 1250C			-50	yA
Zero Gate Voltage Drain Current	IDSS	VDS = -60 V, VGS = 0 V, Tj = 1750C			-150	yA
On-State Drain Currenta	ID(on)	VDS = -5 V, VGS = -10 V	-120			A
I		VGS = -10 V, ID = -30 A		0 017	0 020	Q
I Drain-Source On-State Resistancea	rDS(on)	VGS = -10 V, ID = -30 A, Tj = 1250C			0 033
I	rDS(on)	VGS = -10 V, ID = -30 A, Tj = 1750C			0 042
Forward Transconductancea	9fs	VDS = -15 V, ID = -30 A	25			s
Dynamicb
Input Capacitance	ciss			4500		pF
Output Capacitance	coss	VGS = 0 V, VDS = -25 V, f = 1 MHz		870
Reversen Transfer Capacitance	Crss	VGS = 0 V, VDS = -25 V, f = 1 MHz		350
Total Gate Chargec	Qg			85	120
Gate-Source Chargec	Qgs	VDS = -30 V, VGS = -10 V, ID = -65 A		24		nC
Gate-Drain Chargec	Qgd	VDS = -30 V, VGS = -10 V, ID = -65 A		22		nC
Turn-On Delay Timec	td(on)			15	40
Rise Timec	tr	VDD = -30 V, RL = 0.47 Q		40	80
Turn-Off Delay Timec	td(off)	ID ~ -65 A, VGEN = -10 V, RG = 2.5 Q		65	120	ns
Fall Timec	tf	ID ~ -65 A, VGEN = -10 V, RG = 2.5 Q		30	60	ns
Source-Drain Diode Ratings and Characteristics (Tc = 250C)b
Continuous Current	Is				-65	A
Pulsed Current	ISM				-200	A
Forward Voltagea	VSD	IF = -65 A, VGS = 0 V		-1.1	-1 4	V
Reverse Recovery Time	trr			70	120	ns
Peak Reverse Recovery Current	IRM(REC)	IF = -65 A, di/dt = 100 A/ys		7	9	A
Reverse Recovery Charge	Qrr	IF = -65 A, di/dt = 100 A/ys		0 245	0 54	uC

STM6316AT Price

Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations and notices. Representation or reproduction of this information with alteration voids all warranties provided for an associated TI product or service, is an unfair and deceptive business practice, and TI is not responsible nor liable for any such use.
STM6316AT on stock

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
tset(CDS)	CDS setting time	control DAC 4 bits input code; AGC gain = 0 dB; fcut(AGC) = 54 MHz; Vi(CDS) = 600 mV (p-p) black-to-white transition in 1 pixel (+1 LSB typ.) 0000 0001 0010 0011 0100 0111 1000 1011 1111		8 21 42 52 82 94 195 219 280		ns ns ns ns ns ns ns ns ns
Amplifier outputs
UAMPOUT	output amplifier gain			6		dB
AMPOUT	output amplifier impedance			300		I
VAMPOUT(p-p)	output amplifier dynamic voltage (peak-to-peak value)			2.4		V
VAMPOUT(bl)	output amplifier black level voltage			1.5		V
VAGCOUT(p-p)	AGC output amplifier dynamic voltage level (peak-to-peak value)			2000		mV
VAGCOUT(bl)	AGC output amplifier black level voltage	Vref connected to DACOUT		Vref		V
AGCOUTfbh	AGC output amplifier output impedance	at 10 kHz		5		I
lAGCOUT	AGC output static drive current	static			1	mA
GAGC(min)	minimum gain of AGC circuit	AGC DAC input code = 00 (9-bit control)		4.5		dB
GAGC(max)	maximum gain of AGC circuit	AGC DAC input code > 319 (9-bit control)		34.5		dB
fcut(AGC)	cut-off frequency AGC	4-bit control DAC input code = 00 input code = 15		54 4		MHz MHz
Clamps
9m(ADC)	ADC clamp transconductance	at clamp level		7		mS
9m(CDS)	CDS clamp transconductance	at clamp level		1.5		mS



j	' -f				h	t
		'-'_			h

	-'--			---
			-		h-
				---

Suppliers Datasheet
		Exact Matc