STM LK112M28TR Datasheet| 9U9{250 TOSHIBA (DISCRETE/OPTO) 5bC 07589 D - 3 3- (J | | 2SC2706 - | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) | | Unit in mm | | \UDIO FREQUENCY POVIER AMPLIFIER APPLICATIONS. | 159LfAY &2Ce2 | | | PEATURES : . Complementary t0 2SA1146. | l | | l -d | E | | . Recommended for 70W audio frequency amplifier outpu stage. | | | I H i | | | | . High transition frequency : fT=90MHz(Typ.) | zo a3111.W | J 1f] 11 | | ±2l | U) 3 | | vlAXIMUM RATINGS (Ta=250C) - | | l | | CHARACTERISTIC | SYMBOL | RATING | UNIT | | 45Q2 a45Q2 d | | Collector-Base Volage | VCBO | 140 | V | | dd | | | | j | | Collector-Emitter Voltage Emitter-Base Voltage -- | VCEO VEBO | 140 5 | V V | +l t ' | | Colrlector Current | IC | 10 | A | -1. BASE Z. COLLECTOR (HEAT SINK) | | Base Current | IB | l | A | S EbtITTER | | Collector Power Dissipation | Pc | 100 | w | JEOEC | | (Tc=250C) | EAJ | | Junction Temperature | Tj | 150 | oC | TOSHIBA 2-16BIA | | Sorage Temperature Range | Tst2 | -55150 | oc | Weight : 4.6g | | ELECTRICAL CHARACTERISTICS (Ta=250C) | | CHARACTERISTIC | SYMBOL | TEST CONDITION | MIN | TYP | MAX | UNT | | | Collector Cut-off Current | ICBO | VCB=140V, IE-O | | | 50 | pA | | Emitter Cut-off Current | EB0 | VEB=5V, IC=O | | | 50 | p,A | | Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=50mA, IB=O | 140 | | | V | | DC Current Gain | hFE (1) (Note) | VCE=5V, IC=1A | 55 | | 240 | | | hFE(2) | VCE= 5V, IC= 5A | 30 | | | | Collector-Emitter Saturation Voltage | VCE (sat) | IC=5A, IB=0.5A | | | 2.0 | V | | Base-Emitter Voltage | YBE | VCE=5V, IC=5A | | | 2.5 | V | | Transition Frequency | fT | VCE=10V, IC=1A | | 90 | | lfHz | | Collector Output Capacitance | Cob | VCB=10V, IE=O. f=ll.lHz | | 130 | | pF | | Noe: hFE Classification. R:55~110, 0:80-160, Y:120~240 TOBHlaA CORPORATlaNmu¨I¨¨¨¨¨¨¨IInumummimnmmi¨I¨¨uI¨¨¨¨¨¨llr - 520- | | | | | | | | | | | | | | | | |
STM LK112M28TR Price| | | | | | | f=lMHz | | | | | | | | | Ta2 | - 254( | | | | | | | | | | | | | | | | | | | | | | | | | | | | | 1-h | --- | - | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
STM LK112M28TR on stock| Inverse diode continuous forward current | s | TA=25C | | | -0.39 | A | | Inv. diode direct current, pulsed | sM | | | -1.56 | | Inverse diode forward voltage | D | VGS =0, /F=-0.39 | | -1 | -1.33 | V | | Reverse recovery time | | VR =-1 0V. l,t I = l/D l. | | 7.6 | 9.5 | ns | | Reverse recovery charge | Qrr | diFldt=lOO/Vps | | 1.1 | 1.4 | nC | | | | | | | |
In order to ensure data integrity, elspecially during criti- cal power-up and power-down transitions, the following enhanced data protection circuits are incorporated: First, an internal vcc detect (3.3 volts typical) will inhibit the initiation of non-volatile programming operation when Vcc is less than the Vcc detect circuit trip. Second, there is a WE filtering circuit that prevents WE pulses ofless than 10 ns duration from initiating a write cycle. Third, holding WE or CE high or OE low, inhibits a write cycle during power-on and power-off (vcc).
|
