The K9F5608UOM has addresses multiplexed int0 8 l/O's. This scheme dramatically reduces pin counts and allows systems upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through l/O's by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the l/0 pins. All commands require one bus cycle except for Block Erase command which requires two cycles: one cycle for erase-setup and another for erase-execution after block address loading. The 32M byte physical space requires 25 addresses, thereby requiring three cycles for byte-level addressing: col- umn address, low row address and high row address, in that order. Page Read and Page Program need the same three address cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used. Device operations are selected by writing specific commands into the command register. Table l defines the specific commands of the K9F5608UOM.
| | | | | | | | | | Ta=25C |
| | | | IB: | 1 | Om Z | | | o( | m 08mA | |
| | | | | | | | | | -0.7mA -0.6mA |
| | J | | | | | | | | -0.5mA -0.4mA |
| | | | | | | | | | -0.3mA |
| | | | | | | | | | -0.2mA |
| | r | | | | | | | | -0.1 r | nA |
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