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STK7563FT-F7563BDB6T Datasheet

Characteristic Symbol 10A01 10A02 10A03 10A04 10A05 10A06 10A07 Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current (Note l) @ TA = 500c lO 10 A
Non-Repetitive Peak Forward Surge Current 8.3ms single_half sine-wave superimposed on rated load (JEDEC Method) IFSM 600 A
Forward Voltage @ IF = 10A VFM 1O V
10Peak Reverse Current @TA = 25aC at Rated DC Blocking Voltage @ TA = 1000c IRM 10 100 UA
Typical Junction Capacitance (Note 2) Ci 150 80 pF
Typical Thermal Resistance Junction to Ambient ROJA 10 K/W
Operating and Storage Temperature Range TSTG -65 to +150 oC


STK7563FT-F7563BDB6T Price
1. The K9D I G08VOX, K9S1208VOX may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The num- ber of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-market bad blocks. Refer to the attached technical notes for an appropriate management of invalid blocks. 2. Per the specification of the physical format version l.2 by SSFDC forum, minimum l,000 vaild blocks are guaranteed for each 16MB memory space.
DESCRIPTION The ULN2001A, ULN2002A, ULN2003 and ULN2004Aare high voltage, high current darlington arrays each containing seven open collector dar- lington pairs with common emitters. Each channelis rated at 500mAand can withstand peak currents of 600mA.Suppression diodes are included forinduc- tive load driving and the inputs are pinned opposite the outputs to simplify board layout.