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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
STK68C3323(DC1100-A3) SYNTEK        159 
    EVER SUCCESS INC.LIMITED
  • Contact:Jenny
  • Tel:86-755-83005767
  • Fax:
  • Email: zcxyic@yahoo.cn
STK68C3323(DC1100-A3) SYNTEK    233  New&Original  159 

STK68C3323(DC1100-A3) Datasheet

Ta=25C
IB=-l.Or iA
= -0 9mA -0 8mA
-0 7mA
-0 6mA
-0.5mA
j j -0 4mA -0 3mA
r -0 2mA -O lmA


STK68C3323(DC1100-A3) Price

d 5 1MAX - 0
123 9 i
1. GATE 2. ANODE 3. CATHODE
JEDEC T0-92
JEITA SC-43
TOSHIBA 13-5AIA


STK68C3323(DC1100-A3) on stock

Symbols 2W005G 2WOIG 2W02G 2W04G 2W06G 2W08G 2W10G Units
Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at TA = 25 0C I(AV) 2 A
Peak forward surge current , 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) IFSM 60 A
Maximum forward voltage at 2.OA DC VF 1.1 V
Maximum DC reverse current @ TJ = 25 uC at rated DC blocking voltage @ TJ =125 0C IR 5 500
Typicaljunction capacitance per element (Note l) cJ 25 pF
Typical thermal resistance (Note 2) RejA 40 oC/w
Operating temperature range TJ -55 to +150 OC
Storage temperature range Ts -55 to +150 OC


Bezeichnung Description Symbol Symbol Wert Value Einheit Unit
LD 274 LD 274-21) LD 274-3
Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 50 50 1 00 80 mW/sr mW/sr
Strahlstarke Radiant intensity IF = 1 A, tp = 100 ccs Ie typ 350 600 800 mW/sr


 
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