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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
STK62256-20 SUNDRY    07+  香港/深圳现货   1000 
    Honggu Technology Co., Ltd.
  • Contact:liao
  • Tel:86-755-82581592
  • Fax:
  • Email: gv@hkgvt.com
STK62256-20 SUNDRY  香港/深圳现货   07+     
    e-top international trading c..
  • Contact:Mr.yang
  • Tel:86-755-82791084
  • Fax:--
  • Email: edisony1@yahoo.cn
STK62256-20 SUNDRY  07+      1000 
    GRANDVALLEYTECHNOLOGYCOMPANYLI..
  • Contact:Mr.NeilChen
  • Tel:86-755-82581592
  • Fax:86-755-82581593
  • Email: gv@hkgvt.com

STK62256-20 Datasheet
Pl accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of Pl covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.
STK62256-20 Price

PARAMETER TEST CONDITIONS MIN TYPt MAX UNIT
vo = 12 V, ENABLE low 15 100 ccA
10(off) Off-state output current vo = 45 V, ENABLE high O6 2 mA
vo = 12 V, ENABLE high 200 400 600 ccA
IIL Low-Ievel input current VI=O t0 0.8 V -10 25 40 ccA
Ainputs 10 25 60 ccA
IIH High-Ievel input current ENABLE O2 1 mA
IOL= 100 mA O1 0 15 V
IOL= 500 mA O3 0 55
VOL Low-Ievel output voltage IOL=1A O8 1 3
FAULT output, IOL = 30. 0.2 0 4
IOL Low-Ievel output current FAULT output, VOL = 1 V t0 5.5 V 50 90 125 ccA
IR(K) Clamp-diode reverse current Vr = 50 V, VO = 0 100 ccA
lf=lA 2 V
VF(K) Clamp-diode forward voltage If= 1.5 A 2 5
Outputs off, ENABLElow 0 25
[CC Supply current Outputs on, TA = -40YC 120 mA
Outputs on, TA = 25YC t0 125YC 100


STK62256-20 on stock

SPECIFICATIONSa
Test Conditions Unless Otherwise Specified Limits D-Suffix, -40YC t0 85IC
Parameter Symbol DISCHARGE = -VIN = 0 V Vcc = 10.Y, +VIN = 48 V .i RBIAS = 820 kl , Rosc = 910 kl Tempb Mine Typd Maxe Unit
MOSFET Switch
Breakdown Voltage V(BR)DSS IDRAIN = 100 I_iA F ull 200 220 V
Drain-Source On Resistanceg rDS(on) IDRAIN = 100 rriA Room 5 7 W
Drain Off Leakage Current IDSS VDRAIN = 100 V Room 10 pA
Drain Capacitance CDS Room 35 pF


Parameter Symbol Values Unit
Collector-emitter voltage EO 1 2 V
Collector-emitter voltage ES 20
Collector-base voltage BO 20
Emitter-base voltage VEBO 2
Collector current c 80 mA
Base current B 1 0
Total power dissipation Ts " 66 aC Ptot 580 mW
Junction temperature Tj 1 50 aC
Ambient temperature - 65+150
Storage temperature Tstg - 65+150