ADMap-8  > SKFT150-080S

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SKFT150-080S Datasheet

VCE = 3 V, f = 2 GHz lcq = 5 mA (RF OFF) j j
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c
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SKFT150-080S Price

l II
__-__0 f- E, J -P - J1 v -J -l j P
_ 7 Enn
COMMON EMITTER vcc = 600V VGE = +15V Te = 250C IC=400A - Tc=1250C
GATE RESISTANCE RG (fl)


SKFT150-080S on stock
Chip Enable(CE) The CE input is the device selection control. When CE goes high during a read operation the device is returned to standby mode. However, when the device is in the busy state during program or erase, CE high is ignored, and does not return the device to standby mode.

Symbol PNP Parameter NPN 2N6034 2N6037 2N6035 2N6038 2N6036 2N6039 Unit
VCBO Collector-base Voltage (IE = O) 40 60 80 V
VCEO Colletor-emitter Voltage (lB = O) 40 60 80 V
VEBO Emitter-base Voltage (lc = O) 5 V
Ic Collector Current 4 A
ICM Collector Peak Current 8 A
lB Base Current 100 mA
Ptot Total Power Dissipation at Tcase < 250C 40 W
Tstg Storage Temperature - 65 t0 150 oc
Tj Junction Temperature 150 oc