SKF-0J106M-RA2 Datasheet| Parameter | Symbol | Conditionso) | Min | Typ | Max | Units | | Output Voltagec2) | VOUT | VIN = VOUT + 3V, IOUT = 10mA | -3% | VOUT | +3% | V | | Fixed Voltage Version | | -4% | +4% | | Reference Voltagec2) | VREF | VIN = VOUT + 3V, IOUT = 10mA | 1.213 | 1.250 | 1.288 | V | | Adj. Voltage Version | | 1.200 | 1.300 | | Line Regulationc2) | REGcLINE) | IOUT 2 10mA | | O015 | 0.2 | % | | | 0.035 | 0.2 | | Load Regulationc2) | REGcLOAD) | VIN=3V | | 0.1 | 0.3 | % | | | 0.2 | 0.4 | | Dropout Voltage AVOUT, AVREF = 1% | VD | | | 1.3 | 1.5 | V | | Surge Current Limit | Is | | | 0.5 | | A | | Quiescent Current | lo | VIN=10V | | 10 | 1 5 | mA | | Thermal Regulationc3) | REGcTHERM) | | | 0.002 | 0.01 | %/w | | | | | | | |
SKF-0J106M-RA2 Price| Param eter | Sym bol | Limits | Unit | | Power dissipation | D | 1000 | mW | | Junction temperature | Tj | 1 50 | | | Storage tem perature | Ts tg | -55 to +150 | | | | | |
SKF-0J106M-RA2 on stock start pulses. During this line time, the charge stored on each photodiode is gradually removed by photocurrent. The pho- tocurrent is the product of the diode sensitivity and the light intensity orirradiance. The totalcharge removed from each cell is the product of the photocurrent and the line time. This charge must be replaced through the video lina when the diode is sampled and reset once each scan. | | | | Limits | | | Symbol | Parameter | Test conditions | Min | Typ | Max | Unit | | V (BR) DSS | Drain-source breakdown voltage | ID = ImA, VGs = OV | 300 | | | v | | V (BR) GSS | Gate-source breakdown voltage | IG = +100ccA, VDS = OV | ±30 | | | v | | IGSS | Gate-source leakage current | VGS = +25V, VDS = OV | | | ±10 | | | IDSS | Drain-source leakage current | VDS = 300V, VGS = OV | | | 1 | mA | | VGS (th) | Gate-source threshold voltage | ID = 1rTiA, VDS = 10V | 2 | 3 | 4 | v | | rDS (ON) | Drain-source on-state resistance | ID = 8A, VGS = 10V | | 0 25 | 0.33 | | | VDS (ON) | Drain-source on-state voltage | ID = 8A, VGS = 10V | | 2 0 | 2 64 | v | | yfs | Forward transfer admittance | ID = 8A, VDS = 10V | 6 5 | 10 0 | | S | | Ciss | Input capacitance | | | 1050 | | pF | | Coss | Output capacitance | VDS = 25V,VGS = Oy f= 1MHz | | 220 | | pF | | Crss | Reverse transfer capacitance | | 45 | | pF | | td (on) | Turn-on delay time | | | 20 | | ns | | tr | Rise time | VDD = 150V ID = 8A, VGS = 10V, RGEN = RGS = sol | | 40 | | ns | | td (off) | Turn-off delay time | | 110 | | ns | | tf | Fall time | | 50 | | ns | | VSD | Source-drain voltage | Is = 8A, VGS = OV | | 1 5 | 2 0 | v | | Rth (ch-c) | Thermal resistance | Channel to case | | | 1.00 | IC/W | | | | | | | |
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