SKE4F2-02 Datasheet| | | | Ratings | | | Parameter | Symbol | Conditions | min | typ | max | Unit | | Drain-to-Source Voltage | VDS | VGIS=OV, VG2S=OV, IDS=lOOpA | 15 | | | V | | Gatel-to-Source Cutoff Voltage | \/GIS(off) | VDS=6V, VG2S=4V, ID=lOOpA | O | 0 7 | 1 3 | V | | Gate2-to-Source Cutoff Voltage | \/G2S(off) | VDS=6V, VGIS=3V, ID=lOOpA | 0 1 | 0 9 | 1 6 | V | | Gatel-to-Source Leakage Current | oGlSS | VGIS=+6V, VG2S=VDS=OV | | | +50 | nA | | Gate2-to-Source Leakage Current | oG2SS | VG2S=+6V, VGIS=VDS=OV | | | +50 | nA | | Zero-Gate Voltage Drain Current | oDSX | VDS=6V, VGIS=1.2V, VG2S=4V | 5.0* | | 24.0* | mA | | Forward Transfer Admittance | l yfs l | VDS=6V, ID=lOmA, VG2S=4V, f=lkHz | | 22 | | mS | | | | | | | |
SKE4F2-02 Price| TEST ITEM | PACKAGE | TEST CONDITIONS Filter is soldered onto the center of PCB which is laid on two small supporters | TEST METHOD | | SMD | spaced 90mm apart. The PCB is deflected to Imm below the horizontal level by the pressing stick for l second and repeated 5 times. | | Terminal Strength | A force of l.0 Kg shall be applied to each terminal in the direction of the axis of terminal for 30 + 5 seconds. | | LEADED | A force of 250 gf is applied to each lead in axial direction. The lead shall be bent 90 degrees to one direction, then in opposite direction and returned to the original position. | | Solderability | BOTH | Lead terminals are immersed in methanol with 7 t0 10% of rosin flux for about 5 seconds, then immersed in soldering bath at 230 + 50C for 5 + 0.5 seconds. | MIL-STD-202E Method 208C | | Random Drop | BOTH | Drop 3 times on concrete floor from l.0 meter, (30cm for some products). | | Vibration | BOTH | Vibration amplitude of l.5mm at 10-55Hz in each of three mutually perpendicular directions for l hour. | MIL-STD-201 E Method 201A | | | | |
SKE4F2-02 on stock| | LD-330 | LD-360 | LD-390 | LA-330 | LA-360 | LA-390tt | Units | | TotaIPeak RadIant Flux Min. at mcoc rated I fm Typ. | 300 380 | 600 700 | 1000 1200 | 240 320 | 480 550 | 800 1000 | Watt | | Total Number of Diodes | 36 | 66 | 120 | 36 | 66 | 120 | | | Emitling Area | 115x 65 | 156x 105 | 156x 185 | 115 x65 | 156 x105 | 156 x185 | mils | | Max Peak - Forward Curr. (tfm) | 40 | 40 | 40 | 30 | 30 | 30 | amps | | Typ.Threshold Current (lth) | 10 | 10 | 10 | 12 | 12 | 12 | amps | | Typical Peak Forward @lfm Voltage @50mA | 235 44 | 215 40 | *150 28 | 235 48 | 215 144 | 150 31 | volts | | Duty Factorlfm | ¨0.02 | ¨0.02 | 0.02 | 0,01 | 0101 | 0,01 | % | | Mcoc Pulse Width | 200 | 200 | 200 | 80 | 80 | 80 | ns | | Number of Ports | 1 | 2 | 5 | 1 | 2 | 5 | | | | | | | | | |
| SPECIAL FUNCTION REGISTERS (ONLY DIRECTLY ADDRESSABLE) | | 128 BYTES ON-CHIP DATA MEMORY (DIRECTLY AND INDIRECTLY ADDRESSABLE) | | 16-BIT ADDRESSABLE BYTES | | |
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