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SKD110-14 Datasheet
A STOP condition acts as a protection of non-volatile memory. A valid Identification Byte, Address Byte, and tota number of SCL pulses act as a protection of both volatile and non-volatile registers. During a Write sequence, the Data Byte is loaded into an internal shift register as it is
SKD110-14 Price

RM4558 RC4558
Parameters Test Conditions Min Typ Max Min Typ Max Units
Input Offset Voltage RS ilOkQ 1.0 5.0 2.0 6.0 mV
Input Offset Current 5.0 200 5.0 200 nA
Input Bias Current 40 500 40 500 nA
Input Resistance 0.3 1.0 0.3 1.0 MQ
Large Signal Voltage Gain RL > 2kQ, VOUT = +10V 50 300 20 300 V/mV
Output Voltage Swing RL10kQ +12 +14 +12 ±14 V
RL2kQ +10 +13 +10 ±13 V
Input Voltage Range +12 +13 +12 ±13 V
Common Mode Rejection Ratio RS ilOkQ 70 100 70 100 dB
Power Supply Rejection Ratio RS ilOkQ 76 100 76 100 dB
Power Consumption RL 2 100 170 100 170 mW
Transient Response Rise Time VIN = 20 mV RL = 2kQ 0.3 0.3 uS
Overshoot CL100pF 35 35 %
Slew Rate RL2kQ 0.8 0.8 V/pI,S
Channel Separation F = 10kHz, RS = 1kQ 90 90 dB
Unity Gain Bandwidth (Gain = 1) 2.5 3.0 2.0 3.0 MHz


SKD110-14 on stock

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Limits
Symbol Parameter Test condilions Min Typ Max I Inil
IDSS Saturated drain currem VDS = 3V, VDS =OV 4.0 5.6 A
9m Transconduaance VDS - 3V, ID=2.2A 2.0 s
VGS (off) Gate to source cut-off vokage VDS=3V, ID=20mA -2 -3 -4 v
PldB Output power at ldB ga,n cornpressron 37 38 dBm
GLP Linear power gain VDS = 10V. ID 2.4A, 1= 12.212.8GHz 5.0 6.0 dB
7add Power added efficiency 23 %
Rth (ch-c) Thermal resistance * 1 AVf m method 3.5 /w