ADMap-9  > SKCH40-08

suppliers of SKCH40-08 and PDF data of SKCH40-08

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SKCH40-08 Module        71 
    Concordance Electronics Co
  • Contact:cai
  • Tel:86-755-82567399
  • Fax:86-755-82539822
  • Email: cydz6666@gmail.com


SKCH40-08         71 
    shenzhen zexinke Electronics ..
  • Contact:sam
  • Tel:86-755-82567399
  • Fax:86-0755-82539822
  • Email: cec_sale@yeah.net
SKCH40-08 SEMIKRON  Module    new and original  20 


SKCH40-08 SEMIKRON    05+  new and original  20 
    QY Electronics (HK) Co., Limi..
  • Contact:Chen
  • Tel:86-755-61249260
  • Fax:86-755-61249261
  • Email: hkqydz@gmail.com
SKCH40-08 SEMIKRON  MODULE IGB  2005+  MODULE IGBT  119 
    PENGHUIDA ELECTRONICS(HK) LIMI..
  • Contact:Xiao
  • Tel:86-755-82807577
  • Fax:86-755-82581450
  • Email: phdic9@gmail.com


SKCH40-08 SEMIKRON      现货  300 
    BeijingWanzhongElectromechanic..
  • Contact:Mr.fengli
  • Tel:86-010-82625031-204
  • Fax:86-010-62632168
  • Email: wanzhong@vip.163.com
SKCH40-08 SEMIKRON      STOCK  500 
    ICINTERNATIONALTRADINGCo.
  • Contact:Ms.jennifer
  • Tel:86-754-84470653
  • Fax:86-754-86674846
  • Email: weisenda@21cn.com
SKCH40-08 SEMIKRON        20 
    AZELECTRONICSLIMITED
  • Contact:Ms.echo
  • Tel:86-755-82814442
  • Fax:86-755-82814440
  • Email: echo@az-ic.com

SKCH40-08 Datasheet
The Simtek STK17T88 combines a 256 Kbit nonvolatile static RAM with a full-featured real-time clock in a reliable, monolithic integrated circuit. The embedded nonvolatile elements incorporate Simtek's QuantumTrap'M technology producing the world's most reliable nonvolatile memory. The SRAM can be read and written an unlimited number of times, while independent, nonvolatile data resides in the nonvolatile elements.
SKCH40-08 Price

TJ = 25 _ f = 1.OP - Vsig = 1C AHz 50m\ /p-p L Ml 7F 3asi [ Jred{ 3ias jt
1 j
h leai ;tanl vnlfn un :l-( np ed a )ff V _ j L


SKCH40-08 on stock

Item Symbo! Condition mln typ. rTlax. Unit
ICBO Vce= -150V, IE =O 100 A
j LL IcEo VCF.- -80V, IB -O -100 FA
iyLi IEB0 VES- -5V, IC -O -5 mA
]p·y V CEO tc = -lOmA, IB =O 100 }7r
hrFc VCE=-4V, Ic=-2A 1000 10000
h F'EZ VCE= -4V. Ic - --4A 500
·i-y VBEtsatl Ic:- -4A, Iu=-16mA - 2.5 V
p.iy VCE(satl Ic - - 4A. IB - -16mA - 2.5 V
}yj> ft VCF.= -10V, Ic= -0.5A, f=lMHz 20 MHz
y> tc)n 0.32 S
tsCZ Jc= -4A, Ihi-- -16mA, IB2=16mA V cc= -50V 1.70 S
t F 1.05 us


Hlgh tran8lent current capabIlIty - up t0 6500A. Fast msponse time -less than 35ns. Excellent voltage clamping characteristics., Very low tempefature coefficient. Low standbycurrent. Compact and light weight. High energ\/ capabilit\t. High voltago - dependentlndex (N) Very low leakage curfent. Low capacitance. Low overshoot characteristics.