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SK40J106MRA Datasheet

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5 ktrr Tj=: 50 1 00 )50c Fig. 5 - Test Circuit Dagram and Reverse Recovery Time Characteristics Fig. 6 -Current Derating Curve 50f2 10(2


SK40J106MRA Price
TYPICAL ELECTRICAL CHARACTERISTICS at VIN = +15V, TA = 250 C, unless otherwise noted. REF-OINT REF-OIN REF-OIGT REF-OIG PARAMETER SYMBOL CONDITIONS TYPICAL TYPICAL TYPICAL TYPICAL UNITS IL= O t0 10mA LoadRegulalion 0.007 0.005 0.009 0.006 %/mA IL- O t0 8mA, NT, GiT @+1250C N OutputVoltageNoise enp.p O.lHztolOHz 20 20 20 20 vVp_p Turn-On Settling To +0.1% of Final Value Time tON 7.5 5.0 7.5 5.0 Us NT, GT @ +1250C QulescentCurrent lsy NoLoad,NT,GT@+1250C . 1.4 1.0 1.4 1.0 mA LoadCurrent 11 21 21 21 21 mA -- SinkCurrent Is -0.5 -0.5 -0.5 -0.5 mA -N Short-CircuitCurrent lsc Vo=0 30 30 30 30 mA N OutputVoltage 10 10 10 10 ppm/oC TemperatureCoefficient TCVo N NOTE: 1. For+250 C specifications of REF-OINT and REF-OIGT, see REF-OIN and REF-OIG respectively,
SK40J106MRA on stock

-D =.50? _7 st (D dy Sta Opera eV ion) alue D = 0.33
___ _ _ N- -D = 0.25 ._
_ _ J _ -D = 0.17 D = 0.08 -
0l ]gle F 'ulse 70 PF S erie


ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.