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SK3875 T Datasheet

Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 0hms interface on all input and output ports. It includes internal closed-loop power control. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands.
SK3875 T Price

Parameter	Description	Test Conditions	SOIC	TSOPI	RTSOPI	Unit
()JA	Thermal Resistance (Junction to Ambient)[6l	Still Air, soldered on a 3 x 4.5 inch, four-layer printed circuit board	68.45	87.62	87.62	oC/w
()JC	Thermal Resistance (Junction to Case)[5]		26.94	23.73	23.73	oC/w

SK3875 T on stock

Current Sensing. The actual peak load current (IPEAK) W be above the calculated value of ITRIP due to delays in the turn off of the drivers. The amount of overshoot can be approximated by: (VBB - [(ITRIP . RLOAD) + VBEMFJ) . tPWM

lPARAMETER	SYMBOL	MIN	TYP	MAX	UNITS	NOTES
Low Level @ RST	VOL			0.4	V	l
Output Current @ 0.4V	IOL	+8			mA
Operating Current	ICC		1.5	2	mA
Vcc Trip Point 5%	VCCTP1	4.5	4.625	4.74	V	1
Vcc Trip Point 10%	VCCTP2	4.25	4.375	4.49	V	1
Vcc Trip Point 15%	VCCTP3	4.0	4.125	4.24	V	l
Output Capacitance	COUT			10	pF
Internal Pull-Up Resistor	RP	3.75	5	6.25	kl

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