| Rating | Symbol | 11E Q10 | Unit |
| Repetitive Peak Reverse Voltage | VRRM | 100 | V |
| Average Rectified | Without Fin or P.C.Board | Io | 1.0 | Ta=261C* | 50Hz Half Sine | A |
| Output Current | P.C.Board mounted | 1.0 | Ta =5 7'LC* | Wave Resistive Load |
| RMS Forward Current | IF (RMSl | 1.57 | A |
| Surge Forward Current | IFSM | 40 | 50Hz Half Sine Wave,lcycle, Non-repetitive | A |
| Operating JunctionTemperature Range | Tjw | 40 to+150 | ]C |
| Storage Temperature Range | Tstg | 40 to+150 | ]C |
| | | | | | |
Features I Low RDS(on) (0.023 S2 )@VGS=10V I Low Gate Charge (Typical 39nC) I Low Crss (Typical 110pF) I Improved dv/dt Capability 1 100% Avalanche Tested I Maximum Junction Temperature Range (1750C) General Description This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superiorswitching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Managementin portable and battery operated products.
