SK10E445PJT Datasheet| | | | | | | | | | | I CBO | | VCB=10V, I E=OmA | | | 1.0 | | | IEBO | | VEB=IV, lc=OmA | | | 1.0 | | | hFE | | VCE=5V, I c=lOmA | 50 | | 250 | | | fT | | VCE=5V, I E=lOmA | 5.0 | 8.0 | | GHz | | Cob | | VCB=5V, I E=OmA, f=lMHz | | 1.0 | | pF | | S21 2 | | VCE=5V, I c=lOmA, f=lGHz | 9.0 | 12.0 | | dB | | NF | | VCE=5V, I c=5mA, f=lGHz | | 1.4 | | dB | | | | | | | |
SK10E445PJT Price| Parameters | Values | Units | Conditions | | VFM Max. ForwardVoltage Drop | 0 62 | v | @15A | T= 25 0C | | (Per Leg) ' See Fig. 1 (1) | 0 82 | V | @30A | | 0.56 | V | @15A | | | 0 71 | V | @30A | T= 125 0C | | IRM Max.ReverseLeakageCurrent | 0 80 | mA | T= 25 0C | | | (Per Leg) ' See Fig. 2 (1) | 45 | mA | T= 125 0C | VR= rated VR | | VF(TO, Threshold Voltage | 0.39 | V | TJ 2 TJ max | | r, Forward Slope Resistance t | 847 | m 1 | | CT Max. Junction Capacitance (Per Leg) | 720 | pF | VR = 5VOC, (test signal range 100Khz to lMhz) 250C | | Ls Typical Series Inductance (PerLeg) | 8.0 | nH | Measuredlead tolead 5mm from package body | | dv/dt Max. Voltage Rate of Change (RatedVR) | 10 000 | VUS | | | | | | |
SK10E445PJT on stock| Speed (ns) | Ordering Code | Package Name | Package Type | Operating Range | | 15 | CY7C188-15VC | V32 | 32-Lead (300-Mil) Molded SOJ | Commercial | | 20 | CY7C188-20VC | V32 | 32-Lead (300-Mil) Molded SOJ | Commercial | | 25 | CY7C188-25VC | V32 | 32-Lead (300-Mil) Molded SOJ | | 35 | CY7C188-35VC | V32 | 32-Lead (300-Mil) Molded SOJ | | | | | |
6. FUNCTIONAL DESCRIPTION The function ofthe card is determined by the combination of the following five control signals, REG#, CEl#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5) (1)COMMON MEMORY FUNCTION When REG# signal is high level, the common memory area is selected. (a)READ MODE To read, WE# is set high level and CEl# or CE2# is set low level and the memory address is applied at inputs AO-A21(4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the following functions according to the combination of CEl# and CE2#. When CEl# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card. The data can be dealt with lower data-bus(DO-D7). When both CEl# and CE2# are set low level, the card operates as a 16 bit data-bus width card. At this mode LSB ofaddress-bus (AO) is ignored. In addition odd byte can be accessed through upper data-bus(D8-D15) when CEl# is set high level and CE2# is set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (AO is ignored). When both CEl# and CE2# are set high level, the card becomes a standby mode where the card consumes low power and the data-bus is placed in high impedance state (above functions of CEl# and CE2# are the same as in the following modes). When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is placed in high impedance state. (b)WRITE MODE To write, the memory address is first applied at inputs AO-A21(4MB) and the data is applied at output pins. Setting CEl# or CE2# low level, WE# low level and OE# high level executes the writing. (2)ATTRIBUTE MEMORY FUNCTION When REG# is set low level, the attribute memory area is selected. MF3XXX-J9CATXX series have no attribute memory but outputs FFh on the lower data-bus(DO-D7) when the following conditions are applied (a)setting CEl# low, CE2# high, OE# low, WE# high and AO low (b)setting CEl# low, CE2# low, OE# low and WE# high (3)BATTERY When the card is used for long periods of time, eventually battery exhaustion occurs. If such a situation is encountered, replace any exhausted battery with a new one as directed in section 21.2 "REPLACING BATTERY" (page 14). The replacement battery model number is indicated under section 21 "BATTERY SPECIFICATIONS"(page 14).
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