| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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SK100EL16VMST Datasheet Write operation occurs when WE is driven low at the rising edge of the clock. BW[d:a] can be used for byte write operation. The pipe- lined NtRAMTM uses a late-late write cycle to utilize 100% of the bandwidth. At the first rising edge of the clock, WE and address are registered, and the data associated with that address is required two cycle later. SK100EL16VMST Price The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 t0 1250C temperature ranges under the pulsed o t0 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. SK100EL16VMST on stock
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