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SK055E106ZAATR1 Datasheet

Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current lCBO VCB = 20 V, IE = 0 100 nA
Emitter cut-off current IEBO VEB = 7 V, lc = 0 100 nA
Collector-emitter breakdown voltage VRCEO lc = 10 rriA, lB = 0 10 V
hFE (1) VCE = 2 V, lc = 0.2 A 400 1000
DC current gain hFE (2) VCE = 2 V, lc = 0.6 A 200
Collector-emitter saturation voltage VCE (sat) lc = 0.6 A, lB = 12 mA O12 V
Base-emitter saturation voltage VBE (sat) lc = 0.6 A, IB = 12 mA 1.10 V
Rise time tr See Figure l circuit diagram. 60
Switching time Storage time tstg Vcc N 6 V, RL = 10Q 215 ns
Fall time tf IBi = -lB2 = 12 mA 25


SK055E106ZAATR1 Price
Virtually all of the power dissipated by the device is dissipated in the powertransistor. The temperature rise in the power transistor will be greater than the temperature rise in the Control section so the effective thermal resis- tance, temperature rise per watt dissipated, will be lower in the Control section. At power levels below 12W the temperature gradient will be less than 25'fC and the maximum ambient temperature will be determined by the junction temperatu re of the Control section. This is due to the lower maximum junction temperature in the Control section. At powerlevels greaterthan 12W the temperature gradient will be greater than 25IC and the maximum ambient temperature will be determined by the Power section. For both cases the junction temperatu re is deter- mined bythe total power dissipated in the device. For most low dropout applicationsthe power dissipation will be less than 12W.
SK055E106ZAATR1 on stock

TC =17 50C, dIFl dt=2I )OA/e _
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PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SR Slew rate at unity gain RL=2kfl, CL=100pF, SeeFigure1 0.5 V/Lrs